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NAND128W3A0BZA6

产品描述32M X 16 FLASH 3V PROM, 35 ns, PDSO48
产品类别存储    存储   
文件大小398KB,共56页
制造商ST(意法半导体)
官网地址http://www.st.com/
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NAND128W3A0BZA6概述

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

32M × 16 FLASH 3V 可编程只读存储器, 35 ns, PDSO48

NAND128W3A0BZA6规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ST(意法半导体)
零件包装代码BGA
包装说明TFBGA,
针数55
Reach Compliance Codecompli
ECCN代码3A991.B.1.A
最长访问时间35 ns
JESD-30 代码R-PBGA-B55
JESD-609代码e0
长度10 mm
内存密度134217728 bi
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量55
字数16777216 words
字数代码16000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16MX8
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
编程电压3 V
认证状态Not Qualified
座面最大高度1.05 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
类型SLC NAND TYPE
宽度8 mm

文档预览

下载PDF文档
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
WSOP48 12 x 17 x 0.65mm
FBGA
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 8.5 x 15 x 1mm
TFBGA63 8.5 x 15 x 1.2mm
HARDWARE DATA PROTECTION
– Program/Erase locked during Power
transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
July 2004
1/56
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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