MIG400J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG400J101H
High Power Switching Applications
Motor Control Applications
l
Integrates inverter power circuits & control circuits (IGBT drive units, protection units for over-current,
under-voltage & over temperature) in one package.
l
The electrodes are isolated from case.
l
High speed type IGBT : V
CE (sat)
= 2.5V (max)
t
off
= 2.0µs (max)
t
rr
= 0.15µs (max)
l
Package dimensions
l
Weight : 510g
: TOSHIBA 2-121A1A
Equivalent Circuit
1
2002-12-06
MIG400J101H
Maximum Ratings
(T
j
= 25°C)
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Module
Storage temperature range
Isolation voltage
Screw torque
AC 1 minute,
M6
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C
―
V
D
-GND terminal
IN-GND terminal
FO-GND (L) terminal
FO sink current
―
―
Condition
P-N power terminal
―
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
T
C
T
stg
V
ISO
―
Ratings
450
600
400
400
1600
150
20
20
20
14
−20
~ +100
−40
~ +125
2500
3
Unit
V
V
A
A
W
°C
V
V
V
mA
°C
°C
V
Nm
Electrical Characteristics
(T
j
= 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
= 600V
V
D
= 15V, I
C
= 400A
V
IN
= 3V
→
0V
I
F
= 400A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
1.4
V
CC
= 300V, I
C
= 400A
V
D
= 15V, V
IN
= 3V
↔
0V
Inductive load
(Note 1)
―
―
―
―
Typ.
―
―
2.0
2.0
2.1
2.1
1.2
0.08
1.2
0.3
Max
2
40
2.5
―
2.7
2.8
1.8
0.15
2.0
0.6
µs
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c (on)
V
V
Switching time
t
rr
t
off
t
c (off)
2
2002-12-06
MIG400J101H
b.
Control Stage
(T
j
= 25°C)
Characteristic
Control circuit current
Input on signal voltage
Fault output
current
Protection
Normal
Symbol
I
D
V
IN (on)
I
FO (on)
I
FO (off)
OC
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
= 15V
V
D
= 15V
V
D
= 15V, I
C
= 400mA
V
D
= 15V
V
D
= 15V, T
j
= 125°C
V
D
= 15V, T
j
= 125°C
V
D
= 15V
Case temperature
Test Condition
Min
―
0.9
8
―
560
840
―
111
93
11.3
11.8
1
Typ.
20
1.1
10
―
640
960
10
118
100
12.0
12.5
2
Max
30
1.3
12
1
―
―
Unit
mA
V
mA
A
A
µs
°C
Over current protection trip level
Short circuit protection trip level
Over current cut-off time
Over
temperature
protection
Control supply
under voltage
protection
Fault output pulse width
Trip level
Reset level
Trip level
Reset level
―
125
107
12.7
13.2
3
―
V
ms
c.
Thermal Resistance
(T
j
= 25°C)
Characteristic
Symbol
R
th (j-c)
R
th (c-f)
IGBT
FRD
Compound is applied
Test Condition
MIN
―
―
―
TYP.
―
―
0.05
MAX
0.078
0.208
―
Unit
°C / W
°C / W
Junction to case thermal
resistance
Case to fin thermal
resistance
3
2002-12-06
MIG400J101H
Note 1: Switching time test circuit & timing chart
4
2002-12-06
嵌入式系统
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