PD - 95867D
HEXFET
®
Power MOSFET plus Schottky Diode
Application Specific MOSFETs
Integrates Monolithic Trench Schottky Diode
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Reverse Recovery Losses
l
Low Switching Losses
l
Low Reverse Recovery Charge and Low Vf
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
l
IRF6691
Qg(typ.)
47nC
V
DSS
20V
R
DS(on)
max
2.5mΩ@V
GS
= 4.5V
1.8mΩ@V
GS
= 10V
MT
DirectFET ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6691
combines IRs industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode.
The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows
dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (R
DS(on)
), reverse recovery charge (Q
rr
) and source to drain
voltage (V
SD
) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691
has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
±12
180
32
26
260
2.8
1.8
89
0.022
-40 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
Power Dissipation
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 10
www.irf.com
1
11/16/05
IRF6691
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
20
–––
–––
–––
1.6
–––
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
1.8
1.2
–––
-4.1
–––
–––
–––
–––
–––
–––
47
14
4.4
15
14
19
30
0.60
23
95
25
10
6580
2070
840
–––
–––
2.5
1.8
2.5
–––
1.4
500
5
100
-100
–––
71
–––
–––
–––
–––
–––
–––
1.5
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
V
Conditions
V
GS
= 0V, I
D
= 1.0mA
mV/°C Reference to 25°C, I
D
= 10mA
mΩ V
GS
= 4.5V, I
D
= 12A
V
V
GS
= 10V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 15A
e
mV/°C I
D
= 10mA, reference to 25°C
mA V
DS
= 20V, V
GS
= 0V
µA
mA
nA
S
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 26A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 17A
See Fig. 17
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
ns
I
D
= 26A
nC
Ãe
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
230
26
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
Ã
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
32
26
200
A
260
0.65
48
39
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
di/dt = 100A/µs
e
e
2
www.irf.com
IRF6691
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.7V
10
1
2.7V
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
ID, Drain-to-Source Current
(Α)
ID = 32A
VGS = 10V
100
10
T J = 150°C
1.0
T J = 25°C
1
VDS = 10V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRF6691
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 17A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 16V
VDS= 10V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
T J = 25°C
10
100
100µsec
10
T A = 25°C
1msec
1
0.0
0.2
0.4
0.6
0.8
VGS = 0V
1.0
1.2
Tj = 150°C
Single Pulse
1
0
1
10
10msec
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF6691
200
VGS(th) Gate threshold Voltage (V)
2.5
175
150
125
100
75
50
25
0
25
50
75
100
125
150
T C , Case Temperature (°C)
ID, Drain Current (A)
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
τ
A
τ
A
τ
4
0.1
τ
1
Ri (°C/W)
0.678
17.30
17.57
9.470
τi
(sec)
0.000860
0.577560
8.940000
106.0000
0.01
τ
2
τ
3
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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