May 1997
NDH853N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
7.6 A, 30 V. R
DS(ON)
= 0.017
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.025
Ω
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
Proprietary SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDH853N
30
±20
7.6
23
1.8
1
0.9
-55 to 150
Units
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 7.6 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 6.7 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 7.6 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
23
18
1
0.7
1.5
1
0.014
0.02
0.021
30
1
10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
2
1.6
0.017
0.031
0.025
A
S
V
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1140
630
210
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 15 V,
I
D
= 7.6 A, V
GS
= 10 V
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
Ω
14
24
73
48
38
2.8
12.7
30
50
120
80
50
ns
ns
ns
ns
nC
nC
nC
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
1.5
(Note 2)
Units
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.5 A
0.72
1.2
P
D
(
t
) =
T
J
−T
A
R
θJA
(t)
=
T
J
−T
A
R
θJC
+R
θCA
(t)
=
I
2
(
t
) ×
R
DS(ON)@T
J
D
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.026 in
2
pad of 2oz copper.
c. 135
o
C/W when mounted on a 0.005 in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH853N Rev. C
Typical Electrical Characteristics
30
3
V
GS
=10V
I
D
, DRAIN-SOURCE CURRENT (A)
25
DRAIN-SOURCE ON-RESISTANCE
6.0
4.5
4.0
2.5
V
GS
= 3.5V
20
R
DS(on)
, NORMALIZED
3.5
2
4.0
4.5
15
1.5
5.0
6.0
10
3.0
5
1
10
2.5
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0.5
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
withDrain Current and Gate Voltage.
1.6
1.8
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.6A
1.4
V
G S
= 10 V
1.6
R
DS(ON)
, NORMALIZED
V
GS
= 10V
R
DS(on)
, NORMALIZED
TJ = 125°C
1.4
1.2
1.2
1
25°C
1
0.8
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.6
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
30
1.2
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 10V
25
T = -55°C
J
125°C
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
I
D
, DRAIN CURRENT (A)
20
15
10
5
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
4.5
V
th
, NORMALIZED
25°C
V
DS
= V
GS
I
D
= 250µA
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDH853N Rev. C
Typical Electrical Characteristics
(continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
I
D
= 250µA
I
S
, REVERSE DRAIN CURRENT (A)
30
10
V
GS
= 0V
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
BV
DSS
, NORMALIZED
1
TJ = 125°C
25°C
-55°C
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
3000
2000
10
I
D
= 7.6A
C iss
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 10V
20V
CAPACITANCE (pF)
1000
15V
6
C oss
500
300
200
4
f = 1 MHz
V
GS
= 0 V
C rss
2
100
0 .1
0 .2
V
DS
0 .5
1
2
5
10
, DRAIN TO SOURCE VOLTAGE (V)
20
30
0
0
10
20
Q
g
, GATE CHARGE (nC)
30
40
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d(on)
t
on
t
off
t
r
90%
t
d(off)
90%
V
IN
D
R
L
V
OUT
V
OUT
10%
t
f
V
GS
R
GEN
10%
INVERTED
G
DUT
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDH853N Rev. C
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