March 1996
NDC7003P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to minimize
on-state resistance, provide rugged and reliable
performance and fast switching. This product is
particularly suited to low voltage applications requiring a
low current high side switch.
Features
-0.34A, -50V. R
DS(ON)
= 5
Ω
@ V
GS
=-10V.
High density cell design for low R
DS(ON)
.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current.
____________________________________________________________________________________________
4
3
5
2
6
SOT-6 (SuperSOT
TM
-6)
1
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDC7003P
-50
-20
-0.34
-1
0.96
0.9
0.7
-55 to 150
Units
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -40 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µ.A
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -0.34 A
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -0.25 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= -10 V, V
DS
= -10 V
V
DS
= -10 V, I
D
= -0.34 A
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-1
250
-1
-0.8
-2.5
-2.2
2.5
4
5.3
-50
-1
-500
100
-100
nA
nA
V
µA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
-3.5
-3
5
10
7.5
A
mS
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
40
13
4
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -25 V,
I
D
= -0.34 A, V
GS
= -10 V
V
DD
= -25 V, I
D
= -0.25 A,
V
GS
= -10 V, R
GEN
= 25
Ω
14
6
13
6
1.3
0.23
0.38
20
20
20
20
nC
nC
nC
nS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Source Current
Maximum Pulse Source Current
(Note 2)
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.34 A
(Note 2)
-0.8
-0.34
-1
-1.2
A
A
V
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 130
o
C/W when mounted on a 0.125 in
2
pad of 2oz cpper.
b. 140
o
C/W when mounted on a 0.005 in
2
pad of 2oz cpper.
c. 180
o
C/W when mounted on a 0.0015 in
2
pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Typical Electrical Characteristics
-1
V
GS
= -10V
I
D
, DRAIN-SOURCE CURRENT (A)
-0.8
3
-9.0 -8.0
-7.0
DRAIN-SOURCE ON-RESISTANCE
2.5
V
GS
=-4.5V
-5.0
-0.6
R
DS(ON)
, NORMALIZED
-6.0
2
-6.0
-7.0
-8.0
-9.0
-10
-5.0
-0.4
1.5
-0.2
-4.0
-3.5
1
0.5
-0.2
0
-1
V
DS
-2
-3
-4
, DRAIN-SOURCE VOLTAGE (V)
-5
-6
I
D
-0.4
-0.6
, DRAIN CURRENT (A)
-0.8
-1
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
1.4
, NORMALIZED
1.2
1
0.8
0.6
0.4
-50
2.5
DRAIN-SOURCE ON-RESISTANCE
I
D
= -0.34A
V
G S
= -10V
V
GS
=-10 V
2
T J = 125°C
1.5
DS(on)
25°C
1
R
-55°C
0.5
-0.2
-0.4
-0.6
I
D
, DRAIN CURRENT (A)
-0.8
-1
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
-1
GATE-SOURCE THRESHOLD VOLTAGE
1.1
V
DS
=- 10V
-0.8
I
D
, DRAIN CURRENT (A)
T = -55°C
J
25°C
125°C
V
th
, NORMALIZED
1.05
V
DS
= V
GS
I
D
= -250µA
1
-0.6
0.95
-0.4
0.9
-0.2
0.85
-1
-2
V
GS
-3
-4
-5
-6
, GATE TO SOURCE VOLTAGE (V)
-7
-8
0.8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE
1
I
D
= 250µA
1.1
-I
S
, REVERSE DRAIN CURRENT (A)
0.5
V
GS
=0V
BV
DSS
, NORMALIZED
0.1
0.05
TJ = 125°C
1.05
25°C
-55°C
1
0.01
0.005
0.95
0.9
-50
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.8
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
100
50
-10
I
D
= -0.34A
, GATE-SOURCE VOLTAGE (V)
Ciss
-8
V
DS
= -12V
-24
-48
CAPACITANCE (pF)
20
10
Coss
-6
5
Crss
f = 1 MHz
-4
2
1
0.1
V
0
0.2
-V
0.5
DS
GS
V
GS
= 0 V
-2
1
2
5
10
20
50
0
0.2
0.4
, DRAIN TO SOURCE VOLTAGE (V)
0.6
0.8
1
Q
g
, GATE CHARGE (nC)
1.2
1.4
1.6
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
0.5
V
DS
=- 10V
, TRANSCONDUCTANCE (SIEMENS)
0.4
TJ = -55°C
25°C
0.3
125°C
0.2
0.1
g
0
-0.2
-0.4
-0.6
-0.8
-1
I
D
, DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
FS
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