VS-HFA120FA60P
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Designed for industrial level
SOT-227
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
V
R
V
F
(typical) at 125 °C
Q
rr
(typical)
I
RRM
(typical)
t
rr
(typical)
dI
(rec)M
/dt (typical) at 125 °C
I
F(DC)
at T
C
Package
Circuit configuration
600 V
1.4 V
270 nC
7.0 A
65 ns
270 A/μs
40 A at 100 °C
SOT-227
Two separate diodes
DESCRIPTION
This SOT-227 modules with HEXFRED
®
rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (VS-HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (VS-HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact
assemblies to be built. These modules are intended for
general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper,
and inverters.
ABSOLUTE MAXIMUM RATINGS PER LEG
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
RMS isolation voltage, any terminal to case
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
V
ISOL
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
J
= 25 °C
Rated V
R
, square wave, 20 kHz, T
C
= 60 °C
t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
75
40
800
180
2500
180
71
- 55 to 150
V
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
V
FM
I
R
= 100 μA
I
F
= 60 A
Maximum forward voltage
I
F
= 120 A
I
F
= 60 A, T
J
= 125 °C
Maximum reverse leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.5
1.9
1.4
2.5
130
120
MAX.
-
1.7
2.1
1.6
20
2000
170
μA
pF
V
UNITS
Revision: 22-Jul-13
Document Number: 94049
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA120FA60P
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
34
65
130
7.0
13
270
490
350
270
MAX.
-
98
200
13
23
410
740
-
-
A
ns
UNITS
nC
Peak rate of recovery current during t
b
dI
(rec)M
/dt1
See fig. 11 and 12
dI
(rec)M
/dt2
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
Weight
Mounting torque
Case style
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
-
MAX.
0.70
0.35
-
-
1.3
SOT-227
g
Nm
°C/W
UNITS
Revision: 22-Jul-13
Document Number: 94049
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA120FA60P
www.vishay.com
Vishay Semiconductors
10 000
T
J
= 150 °C
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (μA)
1000
T
J
= 125 °C
100
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
T
J
= 25 °C
1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0.1
0
94049_02
200
400
600
94049_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
10 000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
10
1
94049_03
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
Z
thJC
- Thermal Response
P
DM
0.1
Single
pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
0.001
94049_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 22-Jul-13
Document Number: 94049
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA120FA60P
www.vishay.com
200
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
160
4000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
3000
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
2000
Vishay Semiconductors
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
120
Q
rr
(nC)
t
rr
(ns)
80
1000
40
100
94049_05
1000
0
100
94049_07
1000
dI
F
/dt (A/μs)
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
10
dI
(rec)M
/dt (A/µs)
1000
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
I
rr
(A)
1000
0
100
94049_06
100
100
94049_08
1000
dI
F
/dt (A/µs)
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
Revision: 22-Jul-13
Document Number: 94049
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA120FA60P
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
L = 100 µH
High-speed
switch
R
g
= 25
Ω
Current
monitor
Freewheel
Diode
I
L(PK)
D.U.T.
+
V
d
= 50 V
V
(AVAL)
V
R(RATED)
Decay
time
Fig. 11 - Avalanche Test Circuit and Waveforms
Revision: 22-Jul-13
Document Number: 94049
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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