January 1999
NDH8321C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance
to
transients are needed.
Features
N-Ch 3.8 A, 20 V, R
DS(ON)
=0.035
Ω
@ V
GS
= 4.5 V
R
DS(ON)
=0.045
Ω
@ V
GS
=2.7 V
P-Ch -2.7 A, -20V, R
DS(ON)
=0.07
Ω
@ V
GS
= -4.5 V
R
DS(ON)
=0.095
Ω
@ V
GS
= -2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
_______________________________________________________________________________
D2
D2
D1
D1
S2
S1
G1
G2
5
6
7
8
4
3
2
1
SuperSOT
TM
-8
Mark: .8321C
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1)
20
±8
3.8
15
(Note 1)
-20
±8
-2.7
-10
0.8
-55 to 150
V
V
A
P
D
T
J
,T
STG
Power Dissipation for Single Operation
W
°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
156
40
°C/W
°C/W
© 1999 Fairchild Semiconductor Corporation
NDH8321C Rev.C1
Electrical Characteristics
(T
Symbol
Parameter
OFF CHARACTERISTICS
A
= 25°C unless otherwise noted)
Conditions
Type
Min
Typ
Max
Units
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= -250 µA
V
DS
= 16 V, V
GS
= 0 V
T
J
= 55
o
C
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55 C
o
N-Ch
P-Ch
N-Ch
20
-20
1
10
V
V
µA
µA
µA
µA
nA
nA
Zero Gate Voltage Drain Current
P-Ch
-1
-10
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125
o
C
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125 C
o
All
All
100
-100
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
N-Ch
0.4
0.3
0.7
0.45
-0.7
-0.5
0.029
0.043
0.036
1
0.8
-1
-0.8
0.035
0.063
0.045
0.07
0.125
0.095
V
P-Ch
N-Ch
T
J
= 125 C
o
-0.4
-0.3
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 3.8 A
V
GS
= 2.7 V, I
D
= 3.3 A
V
GS
= -4.5 V, I
D
= -2.7 A
T
J
= 125
o
C
V
GS
= -2.7 V, I
D
= -2.3A
Ω
P-Ch
0.061
0.087
0.082
I
D(on)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
5
-10
-3
15
8
700
865
370
415
145
150
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 3.8 A
V
DS
= -5 V, I
D
= -2.7 A
S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
pF
pF
pF
NDH8321C Rev.C1
Electrical Characteristics
(T
Symbol
Parameter
SWITCHING CHARACTERISTICS
(Note 2)
A
= 25°C unless otherwise noted)
Conditions
Type
Min
Typ
Max
Units
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DD
= 5 V, I
D
= 1 A,
V
GEN
= 4.5 V, R
GEN
= 6
Ω
P-Channel
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
8
11
22
25
48
78
23
55
19.6
16
2.5
2.4
6.5
5.1
15
22
40
50
90
150
40
100
28
23
ns
ns
ns
ns
nC
nC
nC
N-Channel
V
DS
= 10 V,
I
D
= 3.8 A, V
GS
= 4.5 V
P-Channel
V
DS
= -10 V,
I
D
= -2.7 A, V
GS
= -4.5 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.67 A
V
GS
= 0 V, I
S
= -0.67 A
N-Ch
P-Ch
(Note2)
(Note2)
0.67
-0.67
0.65
-0.7
1.2
-1.2
A
V
N-Ch
P-Ch
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
−
T
A
R
θ
J A
(
t
)
=
T
J
−
T
A
R
θ
J C
R
θ
CA
(
t
)
+
=
I
2
(
t
) ×
R
DS
(
ON
)
@
J
T
D
Typical R
θ
JA
for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH8321C Rev.C1
Typical Electrical Characteristics: N-Channel
20
2
V
I
D
, DRAIN-SOURCE CURRENT (A)
16
GS
= 4.5V
3 .0
2 .5
DRAIN-SOURCE ON-RESISTANCE
1 .8
2.7
R
DS(on)
, NORMALIZED
2 .0
12
V
GS
= 2.0V
1 .6
1 .4
2 .5
2.7
3.0
3 .5
4 .0
4 .5
8
1 .2
1 .5
4
1
0
0
0 .5
V
DS
1
1 .5
2
, DRAIN-SOURCE VOLTAGE (V)
2 .5
3
0 .8
0
4
8
12
I
D
, DRAIN CURRENT (A)
16
20
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
1.8
2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.6
I
D
= 3.8A
V
GS
= 4.5V
R
DS(on)
, NORMALIZED
1 .5
V
GS
= 4.5 V
TJ = 125°C
R
DS(ON)
, NORMALIZED
1.4
25°C
1
1.2
-55°C
0 .5
1
0.8
0.6
-50
0
-25
0
25
50
75
100
T , JUNCTION TEM PERATURE (°C)
J
125
150
0
4
I
D
8
12
, DRAIN CURRENT (A)
16
20
Figure 3. N-Channel On-Resistance Variation
with Temperature.
Figure 4. N-Channel On-Resistance Variation with Drain
Current and Temperature.
15
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 5V
12
I , DRAIN CURRENT (A)
T = -55°C
J
1 .3
25°C
125°C
1 .2
1 .1
1
0 .9
0 .8
0 .7
0 .6
0 .5
-50
V
DS
= V
GS
I
D
= 250µA
9
6
D
3
0
0
0 .5
1
1 .5
2
V
GS
, GATE TO SOU RCE VOLTAGE (V)
2 .5
V
th
, NORMALIZED
-25
0
25
50
75
100
T , JUNCTION TEM PERATURE (°C)
J
125
150
Figure 5. N-Channel Transfer
Characteristics.
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDH8321C Rev.C1
Typical Electrical Characteristics: N-Channel
(continued)
1 .1 5
1 .1 5
DRAIN-SOURCE BREAKDOWN VOLTAGE
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
1 .1
I
D
= 250µA
1 .1
BV
DSS
, NORMALIZED
BV
DSS
, NORMALIZED
1 .0 5
1 .0 5
1
1
0 .9 5
0 .9 5
0 .9
-5 0
-2 5
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
0 .9
-5 0
-2 5
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
Figure 7. N-Channel Breakdown Voltage
Variation with Temperature.
Figure 8. N-Channel Body Diode Forward
Voltage Variation with Current and
Temperature
.
2500
2000
5
I
D
= 3.8A
, GATE-SOURCE VOLTAGE (V)
4
V
DS
= 5V
1500
10V
15V
CAPACITANCE (pF)
1000
Ciss
500
3
Coss
2
300
200
f = 1 MHz
V
GS
= 0V
100
0 .1
V
0 .2
0 .5
1
3
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
GS
Crss
1
Figure 9. N-Channel Capacitance
Characteristics.
30
Figure 10. N-Channel Gate Charge
Characteristics.
, TRANSCONDUCTANCE (SIEMENS)
V
DS
= 5V
25
TJ = -55°C
25°C
20
125°C
15
10
5
g
0
0
4
I
D
FS
8
12
, DRAIN CURRENT (A)
16
20
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
NDH8321C Rev.C1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
