MOSFET
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Fairchild |
RoHS | No |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 30 A |
Rds On - Drain-Source Resistance | 40 mOhms |
Vgs - Gate-Source Voltage | 25 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Tube |
Fall Time | 40 ns |
高度 Height | 16.3 mm |
长度 Length | 10.67 mm |
Pd-功率耗散 Pd - Power Dissipation | 79 W |
Rise Time | 85 ns |
Transistor Type | 1 N-Channel |
类型 Type | QFET |
Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 10 ns |
宽度 Width | 4.7 mm |
单位重量 Unit Weight | 0.090478 oz |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved