d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
S13-1672-Rev. A, 29-Jul-13
Document Number: 62883
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJ470DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.76
44
67
27
17
51.6
150
1.1
85
130
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 2.5
I
D
20 A, V
GEN
= 7.5 V, R
g
= 1
V
DD
= 50 V, R
L
= 2.5
I
D
20 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 50 V,V
GS
= 10 V, I
D
= 20 A
V
DS
= 50 V,V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
2050
470
40
36.9
28.5
7.9
9.2
52
1.35
12
8
22
7
13
12
22
8
-
-
-
56
43
-
-
80
2.2
24
16
24
14
26
24
44
16
ns
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
100
-
-
2.3
-
-
-
30
-
-
-
-
63
- 7.2
-
-
-
-
-
0.0076
0.0083
60
-
-
-
3.5
± 100
1
10
-
0.0091
0.0100
-
V
mV/°C
V
nA
μA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1672-Rev. A, 29-Jul-13
Document Number: 62883
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJ470DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
V
GS
= 10 V thru 6 V
100
I
D
- Drain Current (A)
Vishay Siliconix
120
100
I
D
- Drain Current (A)
80
V
GS
= 5 V
60
80
T
C
= 25
°C
60
40
40
T
C
= 125
°C
20
20
V
GS
= 4 V
0
0.0
1.0
2.0
3.0
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 3 V
5.0
T
C
= - 55
°C
0
0.0
2.0
4.0
6.0
8.0
10.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.0090
3500
0.0085
R
DS(on)
- On-Resistance (Ω)
2800
C - Capacitance (pF)
V
GS
= 7.5 V
C
iss
2100
0.0080
0.0075
1400
C
oss
0.0070
V
GS
= 10 V
700
C
rss
0.0065
0
20
40
60
80
100
0
0
12
24
36
48
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 50 V
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 20 A
1.7
V
GS
= 10 V
6
V
DS
= 25 V
V
DS
= 75 V
1.4
V
GS
= 7.5 V
1.1
4
2
0.8
0
0
8
16
24
32
40
Q
g
- Total
Gate
Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S13-1672-Rev. A, 29-Jul-13
On-Resistance vs. Junction Temperature
Document Number: 62883
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJ470DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.040
Vishay Siliconix
10
I
S
-
Source
Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.032
I
D
= 20 A
0.024
0.1
0.016
T
J
= 125
°C
0.01
0.008
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
500
0.2
V
GS(th)
- Variance (V)
400
I
D
= 5 mA
- 0.4
Power (W)
- 0.1
300
200
- 0.7
I
D
= 250 μA
100
- 1.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
I
D
- Drain Current (A)
I
DM
Limited
100 us
10 I Limited
D
1 ms
1 Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
1
s
BVDSS Limited
10
s
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S13-1672-Rev. A, 29-Jul-13
Document Number: 62883
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJ470DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
65
Vishay Siliconix
52
I
D
- Drain Current (A)
39
26
13
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
70
2.5
56
2.0
Power (W)
42
Power (W)
0
25
50
75
100
125
150
1.5
28
1.0
14
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
S13-1672-Rev. A, 29-Jul-13
Document Number: 62883
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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