DATA SHEET
PHOTO DIODE
NDL5551P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ
50
µ
m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5551P Series is InGaAs avalanche photo diode modules with multimode fiber.
They are designed for
detectors of long wavelength transmission systems and cover the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
•
Smaller dark current
High quantum efficiency
High Speed response
Detecting area size
I
D
= 5 nA
η
= 90 % @
λ
= 1 300 nm, M = 1
η
= 77 % @
λ
= 1 550 nm, M = 1
f
C
= 1.2 G H z @M = 20
•
•
•
•
φ
5 0
µ
m
Coaxial module with multimode fiber (GI-50/125)
NDL5551P1 and NDL5551P2 have a flange.
PACKAGE DIMENSIONS
in millimeters
•
NDL5551P2
Optical Fiber:
GI-50/125
Length: 1 m MIN.
NDL5551P
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
NDL5551P1
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
Shrunk tube
30.0 MAX.
φ
6.0
+0.0
–0.1
12.5 MIN. 4.0±0.1
6.9±0.3
6.9±0.3
12.5 MIN.
3.9±0.5
φ
6.0
+0.0
–0.1
φ
6.0
+0.0
–0.1
φ
0.45
2–
φ
2.2
2.5±0.1
0.5±0.1
2–
φ
2.5
2
3
1
φ
2.0
12.5 MIN.
30.0 MAX.
12.0±0.1
16.0±0.2
φ
2.5
30.0 MAX.
φ
2.5
14.0±0.1
φ
2.5
φ
2.0
φ
2.0
18.0±0.1
LEAD CONNECTION
1 Anode (Negative)
2 Cathode (Positive)
3 Case
3
2
1
The information in this document is subject to change without notice.
Document No. P11103EJ2V0DS00 (2nd edition)
(Previous No. LD-2371)
Date Published March 1996 P
Printed in Japan
The mark
•
shows major revised points.
4.0±0.3
2
1
3.0±0.3
7.0±0.3
1.5
6.0
+0.0
–0.1
3
2
3
1
©
7.0±0.15
1994
NDL5551P Series
•
ORDERING INFORMATION
Part Number
NDL5551P
NDL5551PC
NDL5551PD
NDL5551P1
NDL5551P1C
NDL5551P1D
NDL5551P2
NDL5551P2C
NDL5551P2D
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
vertical flange
flat mount flange
Available Connector
no flange
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C)
Parameter
Forward Current
Reverse Current
Operating Case Temperature
Storage Temperature
Symbol
I
F
I
R
T
C
T
stg
Ratings
10
0.5
−40
to +85
−40
to +85
Unit
mA
mA
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
°
C)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
Symbol
V
(BR)R
δ
*1
Conditions
I
D
= 100
µ
A
MIN.
50
TYP.
70
0.2
MAX.
100
Unit
V
%/°C
I
D
I
DM
C
t
f
C
V
R
= V
(BR)R
×
0.9
M = 2 to 10
V
R
= V
(BR)R
×
0.9, f = 1 MHz
M = 10
M = 20
1
5
1
0.4
1.5
1.2
76
65
0.8
0.81
30
90
77
0.94
0.96
40
30
5
0.75
nA
nA
pF
GHz
Quantum Efficiency
η
λ
= 1 300 nm, M = 1
λ
= 1 550 nm, M = 1
%
Responsivity
S
λ
= 1 300 nm, M = 1
λ
= 1 550 nm, M = 1
A/W
Multiplication Factor
M
λ
= 1 300 nm, I
P0
= 1.0
µ
A
V
R
= V (@ I
D
= 1
µ
A )
Excess Noise Exponent
Excess Noise Factor
x
F
λ
= 1 300 nm, 1550 nm, I
P0
= 1.0
µ
A
M = 10, f = 35 MHz, B = 1 MHz
0.7
5
*1:
δ
=
V
(BR)R
<
25
°C
+
∆
T
°C > −V
(BR)R
<
25
°C >
∆
T
°C ⋅
V
(BR)R
<
25
°C >
2
NDL5551P Series
TYPICAL CHARACTERISTICS
•
Responsivity (Relative Value)
∆
S/S (%)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
Quantum Efficiency
η
(%)
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ
= 1 300 nm
T
C
= 25 ˚C
80
60
40
20
0
0.9
0
1.0
1.1 1.2 1.3 1.4 1.5
Wavelength
λ
(
µ
m)
1.6
1.7
–10
–60 –40 –20
0
40 60
80 100
20
Operating Case Temperature T
C
(˚C)
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
10
–3
λ
= 1 300 nm
I
P0
= 1.0
µ
A
T
C
= 25 ˚C
10
–6
10
–7
DARK CURRENT vs.
REVERSE VOLTAGE
10
–4
Dark Current I
D
(A)
10
–8
T
C
= 85 ˚C
T
C
= 65 ˚C
10
–5
Dark Current, Photo Current I
D
, lph (A)
Iph
10
–9
T
C
= 25 ˚C
T
C
= –20 ˚C
–10
10
0
20
10
–6
40
60
80
Reverse Voltage V
R
(V)
100
10
–7
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
10
3
Multiplication Factor M
T
C
= 65 ˚C
10
–8
10
2
T
C
= –20 ˚C
10
–9
I
D
10
1
T
C
= 25 ˚C
T
C
= 85 ˚C
10
–10
0
20
40
60
80
Reverse Voltage V
R
(V)
100
10
0
0
20
40
60
80
Reverse Voltage V
R
(V)
100
3
NDL5551P Series
Dark Current, Multiplied Dark Current I
D
, I
DM
(A)
TEMPERATURE DEPENDENCE OF DARK
CURRENT and MULTIPLIED DARK CURRENT
10
–6
10
–7
10
–8
10
–9
10
–10
10
–11
–60 –40 –20 0
20
40
60
80 100
Operating Case Temperature T
C
(˚C)
λ
= 1 300 nm
I
D
@ V
R
= 0.9 V
(BR)R
I
DM
Response (3 dB/div.)
FREQUENCY RESPONSE
λ
= 1 300 nm
R
L
= 50
Ω
M=8
T
C
= 25 ˚C
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
5.0
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
10
Cut-off Frequency f
C
(GHz)
Terminal Capacitance C
t
(pF)
T
C
= 25 ˚C
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
2
1
0.5
1
0.2
0.1
0.1
1
10
Multiplication Factor M
100
1
2
5
10
20
50
Reverse Voltage V
R
(V)
100
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
Excess Noise Factor F
50
20
10
5
2
1
1
2
5
10
20
Multiplication Factor M
50
100
1 300 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
0.5
0.4
4
NDL5551P Series
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
•
30
fiber
m
m
m
in
(*3
)
(*1)
18 mm min. (*4)
ferrule (*5)
(*2)
module body
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
