May 1994
NDP508A / NDP508AE / NDP508B / NDP508BE
NDB508A / NDB508AE / NDB508B / NDB508BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
19 and 17A, 80V. R
DS(ON)
= 0.08 and 0.10Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 MΩ)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50
µs)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
T
J
,T
STG
T
L
T
C
= 25°C unless otherwise noted
NDP508A NDP508AE
NDB508A NDB508AE
80
80
±20
±40
19
57
75
0.5
NDP508B NDP508BE
NDB508B NDB508BE
Units
V
V
V
V
17
51
A
A
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
© 1997 Fairchild Semiconductor Corporation
NDP508.SAM
Electrical Characteristics
(T
Symbol
E
AS
I
AR
Parameter
Single Pulse Drain-Source
Avalanche Energy
C
= 25°C unless otherwise noted)
Conditions
V
DD
= 25 V, I
D
= 19 A
Type
NDP508AE
NDP508BE
NDB508AE
NDB508BE
Min
Typ
Max
55
19
Units
mJ
A
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 80 V,
V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
,
I
D
= 250 µA
V
GS
= 10 V,
I
D
= 9.5 A
ALL
ALL
T
J
= 125°C
ALL
ALL
ALL
T
J
= 125°C
NDP508A
NDP508AE
NDB508A
T
J
= 125°C NDB508AE
NDP508B
NDP508BE
NDB508B
T
J
= 125°C NDB508BE
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, I
D
= 9.5 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
ALL
ALL
ALL
DYNAMIC CHARACTERISTICS
19
2
1.4
2.9
2.3
0.057
0.097
80
250
1
100
-100
4
3.6
0.08
0.16
0.1
0.2
V
µA
mA
nA
nA
V
V
Ω
Ω
Ω
Ω
A
ON CHARACTERISTICS
(Note 2)
V
GS
= 10 V,
I
D
= 8.5 A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
17
A
6
9.6
750
200
60
900
250
90
S
pF
pF
pF
C
iss
C
oss
C
rss
NDP508.SAM
Electrical Characteristics
(T
Symbol
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
I
S
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
= 25°C unless otherwise noted)
Conditions
V
DD
= 40 V, I
D
= 19 A,
V
GS
= 10 V, R
GEN
= 15
Ω
Type
ALL
ALL
ALL
ALL
Min
Typ
8.5
66
31
48
23.5
4.5
11.8
Max
20
110
50
80
34
Units
nS
nS
nS
nS
nC
nC
nC
SWITCHING CHARACTERISTICS
(Note 2)
V
DS
= 64 V,
I
D
= 19 A, V
GS
= 10 V
ALL
ALL
ALL
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
19
A
17
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
57
A
51
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V,
I
S
= 9.5 A
V
GS
= 0 V, I
S
= 19 A,
dI
S
/dt = 100 A/µs
ALL
T
J
= 125°C
ALL
ALL
0.87
0.79
78
5.2
1.3
1.2
110
75
V
V
ns
A
t
rr
I
rr
R
θJC
R
θJA
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ALL
ALL
2
62.5
°C/W
°C/W
Notes:
1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
NDP508.SAM
Typical Electrical Characteristics
50
2
V
GS
= 20V
I
D
, DRAIN-SOURCE CURRENT (A)
40
12
R
DS(on)
, NORMALIZED
8.0
DRAIN-SOURCE ON-RESISTANCE
10
1.8
1.6
1.4
V
GS
= 6V
7.0
8.0
10
30
7.0
20
1.2
1
0.8
0.6
0
10
20
30
40
I
D
, DRAIN CURRENT (A)
12
20
6.0
10
5.0
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5
6
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
2.5
DRAIN-SOURCE ON-RESISTANCE
I
D
= 9.5A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
V
G S
= 10V
2
R
DS(on)
, NORMALIZED
TJ = 125°C
2
R
DS(ON)
, NORMALIZED
1.5
1.5
25°C
1
1
-55°C
0.5
0
10
20
30
40
50
0.5
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
20
1.2
V
DS
= 10V
15
GATE-SOURCE THRESHOLD VOLTAGE (V)
TJ = -55°C
25
125
V
DS
= V
1.1
GS
I
D
= 250
µ
A
I
D
, DRAIN CURRENT (A)
V
th
, NORMALIZED
1
10
0.9
0.8
5
0.7
0
2
3
V
GS
4
5
6
, GATE TO SOURCE VOLTAGE (V)
7
8
0.6
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDP508.SAM
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I
D
= 250µA
1.1
50
30
I
S
, REVERSE DRAIN CURRENT (A)
10
5
V
GS
= 0V
TJ = 125°C
25°C
-55°C
BV
DSS
, NORMALIZED
1.05
1
1
0.95
0.1
0.9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
0.01
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
V
GS
, GATE-SOURCE VOLTAGE (V)
1600
1000
CAPACITANCE (pF)
C iss
I
D
= 19A
15
V
DS
= 12V
24
64
500
C oss
200
10
100
5
f = 1 MHz
V
GS
= 0V
1
2
3
5
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C rss
40
0
50
0
10
20
Q
g
, GATE CHARGE (nC)
30
40
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP508.SAM
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
