November 1996
NDP6020 / NDB6020
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
35 A, 20 V. R
DS(ON)
= 0.023
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.028
Ω
@ V
GS
= 2.7 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP6020
NDB6020
Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
20
20
±8
35
100
60
0.4
-65 to 175
V
V
V
A
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
W
W/
°
C
°C
T
J
,T
STG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDP6020 Rev.C
Electrical Characteristics
(T
Symbol
Parameter
OFF CHARACTERISTICS
C
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 16 V, V
GS
= 0 V
T
J
= 55°C
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 18 A
T
J
= 125°C
V
GS
= 2.7 V, I
D
= 16 A
20
1
10
100
-100
V
µA
mA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
0.4
0.2
0.62
0.35
0.019
0.024
0.024
1
0.7
0.023
0.032
0.028
V
Static Drain-Source On-Resistance
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 18 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
60
29
1170
610
180
A
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 20 V, I
D
= 35 A,
V
GS
= 5 V, R
GEN
= 10
Ω
R
L
= 0.5
Ω
7
148
98
233
20
300
200
450
45
nS
nS
nS
nS
nC
nC
nC
V
DS
= 15 V,
I
D
= 35 A, V
GS
= 5 V
32
6
11
NDP6020 Rev.C
Electrical Characteristics
(T
Symbol
Parameter
C
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
S
= 35 A
(Note 1)
V
GS
= 0 V, I
F
= 35 A,
dI
F
/dt = 100 A/µs
1.1
43
1.1
35
100
1.3
90
3
A
A
V
ns
A
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
62.5
°
C/W
°
C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6020 Rev.C
Typical Electrical Characteristics
60
V
GS
= 4.5 V
1 .8
3 .5 3 .0
2 .7
DRAIN-SOURCE ON-RESISTANCE
I
D
, DRAIN-SOURCE CURRENT (A)
50
2 .5
40
R
DS(on)
, NORMALIZED
1 .6
V
GS
= 2.0V
1 .4
2 .5
2 .7
3 .0
30
2 .0
1 .2
3 .5
4 .0
4 .5
5 .0
20
10
1 .5
1
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
0 .8
0
10
20
30
40
I
D
, DRA IN CURRENT (A)
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1 .8
1 .8
I
D
= 18A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5 V
DRAIN-SOURCE ON-RESISTANCE
1 .6
1 .6
V
GS
= 4.5V
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
TJ = 125°C
1 .4
1 .2
1
0 .8
0 .6
0 .4
0
10
20
30
40
I
D
, DRA IN CURRENT (A)
50
60
1 .4
1 .2
25°C
1
-55°C
0 .8
0 .6
-50
-25
0
25
50
75
100
125
T , JUNCTION TEM PERATURE (°C)
J
150
175
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
20
GATE-SOURCE THRESHOLD VOLTAGE
1 .4
V
DS
= 5V
15
T = -55°C
J
25°C
V
DS
= V
GS
1 .2
I
D
= 250µA
I
D
, DRAIN CURRENT (A)
125°C
V
th
, NORMALIZED
1
10
0 .8
0 .6
5
0 .4
0
0 .5
V
GS
1
1 .5
, GATE TO SOURCE VOLTAGE (V)
2
0 .2
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
NDP6020 Rev.C
Typical Electrical Characteristics
(continued)
1 .1 5
20
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
=250µA
1 .1
V
GS
=0V
I
S
, REVERSE DRAIN CURRENT (A)
5
1
0 .5
0 .1
TJ = 125°C
BV
DSS
, NORMALIZED
1 .0 5
25°C
-55°C
1
0 .01
0 .9 5
0 .001
0 .9
-5 0
-2 5
0
T
J
25
50
75
100
125
, JUNCTION TEM PERATURE (°C)
150
175
0 .0001
0
0 .2
0 .4
0 .6
0 .8
1
V
SD
, BODY DIODE FORW A RD VOLTAGE (V)
1 .2
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature
.
3500
8
I
D
= 35A
V
GS
, GATE-SOURCE VOLTAGE (V)
2000
1500
6
V
DS
= 1 0 V
CAPACITANCE (pF)
1000
Ciss
20V
4
15V
500
Coss
200
f = 1 MHz
V
GS
= 0V
Crss
2
100
0 .1
0 .5
1
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
0
0
8
16
24
Q
g
, GATE CHARGE (nC)
32
40
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d (on)
t
on
t
r
90%
t
off
t
d (off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
V
GEN
V
OUT
10%
10%
INVERTED
R
GEN
R
GS
G
90%
V
IN
S
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP6020 Rev.C
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