Datasheet> 器件分类 > 分立半导体> 晶体管> NDP610B

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NDP610B: 产品描述N-Channel Enhancement Mode Field Effect Transistor; 产品类别分立半导体晶体管; 文件大小54KB，共6页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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NDP610B概述

N-Channel Enhancement Mode Field Effect Transistor

NDP610B规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Fairchild
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	compli
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	24 A
最大漏极电流 (ID)	24 A
最大漏源导通电阻	0.08 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	100 W
最大脉冲漏极电流 (IDM)	96 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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May 1994

NDP610A / NDP610AE / NDP610B / NDP610BE

NDB610A / NDB610AE / NDB610B / NDB610BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

Features

26 and 24A, 100V. R

DS(ON)

= 0.065 and 0.080Ω.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

DSS

DGR

GSS

Drain-Source Voltage

Drain-Gate Voltage (R

< 1 MΩ)

Gate-Source Voltage - Continuous

- Nonrepetitive (t

< 50

µs)

Drain Current - Continuous

- Pulsed

Total Power Dissipation @ T

= 25°C

Derate above 25°C

STG

= 25°C unless otherwise noted

NDP610A NDP610AE

NDB610A NDB610AE

100

±20

±40

104

100

0.67

NDP610B NDP610BE

NDB610B NDB610BE

Units

W/°C

°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

-65 to 175

275

NDP610.SAM

NDP610B相似产品对比

	NDP610B	NDP610A	NDP610BE	NDP610AE	NDB610BE	NDB610B	NDB610AE	NDB610A
描述	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	-	不符合	不符合
厂商名称	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	-	-	Fairchild
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3	-	-	-	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compli	unknow	compli	compli	compli	-	compli	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	-	100 V	-	100 V	100 V
最大漏极电流 (Abs) (ID)	24 A	26 A	24 A	-	24 A	-	26 A	26 A
最大漏极电流 (ID)	24 A	26 A	24 A	-	24 A	-	26 A	26 A
最大漏源导通电阻	0.08 Ω	0.065 Ω	0.08 Ω	-	0.08 Ω	-	0.065 Ω	0.065 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	-	TO-263AB	-	TO-263AB	TO-263AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSSO-G2	-	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e0	e0	e0	-	e0	-	e0	e0
元件数量	1	1	1	-	1	-	1	1
端子数量	3	3	3	-	2	-	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	175 °C	175 °C	-	175 °C	-	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	100 W	100 W	100 W	-	100 W	-	100 W	100 W
最大脉冲漏极电流 (IDM)	96 A	104 A	96 A	-	96 A	-	104 A	104 A
认证状态	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	-	YES	-	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	GULL WING	-	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	-	SINGLE	-	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	-	SILICON	-	SILICON	SILICON

NDP610B

NDP610B概述

NDP610B规格参数

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NDP610B相似产品对比

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