June 1996
NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters
and high efficiency switching circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
Features
52 A, 30 V. R
DS(ON)
= 0.0135
Ω
@ V
GS
=10 V
R
DS(ON)
= 0.020
Ω
@ V
GS
=4.5 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6030L
30
± 16
52
156
75
0.5
-65 to 175
275
NDB6030L
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
P
D
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
2
62.5
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
NDP6030L Rev.E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Single Pulse Drain-Source Avalanche Energy V
DD
= 15 V, I
D
= 52 A
Maximum Drain-Source Avalanche Current
100
52
mJ
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 125
o
C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 26 A
T
J
= 125 C
V
GS
= 4.5 V, I
D
= 21 A
I
D(on)
g
FS
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
Forward Transconductance
V
DS
= 10 V, I
D
= 26 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
60
15
32
S
o
30
10
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
1
0.7
1.6
1
0.011
0.017
0.018
3
2.2
0.0135
0.024
0.02
A
V
Ω
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1350
800
300
pF
pF
pF
NDP6030L Rev.E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 10 V
I
D
= 52 A , V
GS
=10 V
V
DD
= 15 V, I
D
= 52 A,
V
GS
= 10 V, R
GEN
=
24 Ω
8
130
45
108
44
6
14
16
250
90
200
60
nS
nS
nS
nS
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 26 A (
Note 1)
T
J
= 125°C
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
52
120
0.93
0.85
1.3
1.2
A
A
V
NDP6030L Rev.E
Typical Electrical Characteristics
60
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
6.0
5.0
4.5
R
DS(on)
, NORMALIZED
3
50
40
V
GS
=3.0V
2.5
4.0
3.5
2
3.5
30
20
10
4.0
4.5
5.0
6.0
1.5
3.0
1
10
2.5
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0.5
0
10
20
30
40
I
D
, DRAIN CURRENT (A)
50
60
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.8
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
2
I
D
= 26A
1.6
1.4
1.2
1
0.8
0.6
-50
V
GS
1.75
1.5
1.25
= 10V
R
DS(ON)
, NORMALIZED
V
GS
= 10V
R
DS(on)
, NORMALIZED
TJ = 125°C
25°C
1
-55°C
0.75
0.5
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
175
0
10
20
30
40
I , DRAIN CURRENT (A)
D
50
60
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
V
DS
= 10V
, DRAIN CURRENT (A)
40
TJ = -55°C
125°C
GATE-SOURCE THRESHOLD VOLTAGE
50
1.4
25°C
V
GS(th)
, NORMALIZED
1.2
V
DS
= V
GS
I
D
= 250µA
30
1
20
0.8
I
D
10
0.6
0
0
1
V
GS
2
3
, GATE TO SOURCE VOLTAGE (V)
4
5
0.4
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation
with Temperature
.
NDP6030L Rev.E
Typical Electrical Characteristics
(continued)
BV
DSS
, NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
50
20
5
1
I
D
= 250µA
1.1
I , REVERSE DRAIN CURRENT (A)
V
GS
= 0V
TJ = 125°C
25°C
-55°C
1.05
0.1
1
0.01
0.9
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
S
0.95
0.001
0.0001
0
0.2
V
SD
0.4
0.6
0.8
1
, BODY DIODE FORWARD VOLTAGE (V)
1.2
1.4
Figure 7. Breakdown Voltage
Variation with Temperature
.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
5000
, GATE-SOURCE VOLTAGE (V)
3000
CAPACITANCE (pF)
2000
10
I
D
= 52A
8
V
DS
= 10V
15V
20V
Ciss
1000
6
Coss
4
500
300
200
0.1
GS
f = 1 MHz
V
GS
= 0V
0.2
0.5
1
2
5
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
30
0
0
Crss
2
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics.
V
DD
V
IN
D
t
on
t
off
t
r
90%
R
L
V
OUT
t
d(on)
t
d(off)
90%
t
f
V
GS
R
GEN
V
OUT
G
DUT
10%
10%
INVERTED
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP6030L Rev.E
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