June 1997
NDP6030PL / NDB6030PL
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
-30 A, -30 V. R
DS(ON)
= 0.042
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 0.025
Ω
@ V
GS
= -10 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6030PL
-30
±16
-30
-90
75
0.5
-65 to 175
275
-65 to 175
NDB6030PL
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
T
J
,T
STG
T
L
T
J
,T
STG
R
θ
JC
R
θJA
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Operating and Storage Temperature Range
°C
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
62.5
°C/W
°C/W
NDP6030PL Rev.B1
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25 C
V
DS
= -24 V, V
GS
= 0 V
T
J
= 125°C
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note)
o
-30
-36
-250
1
-100
-100
V
mV/
o
C
µA
mA
nA
nA
mV/
o
C
-2
-1.6
0.042
0.075
0.025
A
20
S
V
∆
BV
DSS
/
∆
T
J
I
DSS
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
I
D
= -250 µA, Referenced to 25
o
C
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -15 A
T
J
= 125°C
V
GS
= -10 V, I
D
= -19 A
-1
-0.8
2.2
-1.4
-1.08
0.037
0.053
0.021
-20
ON CHARACTERISTICS
∆
V
GS(th)
/
∆
T
J
V
GS(th)
R
DS(ON)
Gate Threshold Voltage Temp.Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -19 A
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
I
rr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note)
1570
975
360
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -15 V, I
D
= -5 A,
V
GS
= -5 V, R
GEN
= 6
Ω
12.5
60
50
52
25
120
100
100
36
nS
nS
nS
nS
nC
nC
nC
V
DS
= -12 V
I
D
= -30 A , V
GS
= -5 V
26
6.5
11.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
S
= -15 A
V
GS
= 0 V, I
F
= -30 A
dI
F
/dt = 100 A/µs
(Note)
-30
-100
-0.92
58
-1.5
-1.3
A
A
V
ns
A
Note:
Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6030PL Rev.B1
Typical Electrical Characteristics
-I
D
, DRAIN-SOURCE CURRENT (A)
60
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V -7.0
1.6
R
DS(ON)
, NORMALIZED
-6.0
-5.0
-4.5
-4.0
-3.5
-3.0
1.4
1.2
1
0.8
0.6
0.4
V
GS
= -3.5 V
-4.0
-4.5
-5.0
-5.5
-6.0
-7.0
-10
40
20
0
0
1
2
3
4
5
0
10
20
30
40
50
60
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE (OHMS)
1.8
0.12
I
D
= -15A
R
DS(ON)
, ON-RESISTANCE
T = 25°C
A
I
D
= -15A
125 °C
1.6
1.4
1.2
1
0.8
0.6
-50
V
GS
= -4.5V
0.1
0.08
0.06
0.04
0.02
0
R
DS(ON)
, NORMALIZED
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
150
175
2
4
6
8
10
-V
GS
,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
-I
S
, REVERSE DRAIN CURRENT (A)
30
60
10
1
0.1
0.01
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
25
20
15
10
5
0
1
-V
2
GS
T = -55°C
A
V
GS
= 0V
TJ = 125°C
25°C
-55°C
25°C
125°C
3
4
5
0.0001
0.2
0.4
-V
SD
0.6
0.8
1
1.2
1.4
, GATE TO SOURCE VOLTAGE (V)
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
NDP6030PL Rev.B1
Typical Electrical Characteristics
(continued)
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
5000
I
D
= -30A
CAPACITANCE (pF)
8
V
DS
= -6V
-12V
-24V
3000
2000
C
iss
1000
6
Coss
4
500
300
2
150
0.1
f = 1 MHz
V
GS
= 0 V
0.3
1
2
5
10
C
rss
0
20
30
0
10
20
30
40
50
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8.Capacitance Characteristics.
150
100
-I
D
, DRAIN CURRENT (A)
50
30
IT
LIM
N)
S(O
RD
10µ
s
10
0µ
s
POWER (W)
7000
6000
5000
4000
3000
2000
1000
0
0.001
1m
s
10m
s
100
ms
DC
SINGLE PULSE
R
θ
JC
=2° C/W
T
C
= 25°C
10
5
2
1
1
V
GS
= -4.5V
SINGLE PULSE
R
θ
JC
= 2.0 °C/W
T
C
= 25°C
2
5
10
20
30
50
0.01
0.1
1
10
100
1,000
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
TRANSIENT THERMAL RESISTANCE
1
0.5
0.3
0.2
0.1
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.0 °C/W
P(pk)
0.1
0.05
0.05
0.03
0.02
0.02
0.01
Single Pulse
t
1
t
2
T
J
- T
C
= P * R
θ
JC (t)
Duty Cycle, D = t
1
/t
2
0.1
0.5
1
5
t
1
,TIME (ms)
10
50
100
500
1000
0.01
0.01
0.05
Figure 11. Transient Thermal Response Curve.
NDP6030PL Rev.B1
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