March 1996
NDS355N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMICA
cards, and other battery powered circuits where fast switching,
and low in-line power loss are needed in a very small outline
surface mount package.
Features
1.6A, 30V. R
DS(ON)
= 0.125
Ω
@ V
GS
= 4.5V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
Parameter
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
NDS355N
30
20
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1b)
(Note 1a)
± 1.6
± 10
0.5
0.46
-55 to 150
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to -Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS355N Rev. D1
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
=125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 12 V, V
DS
= 0 V
V
GS
= -12 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 1.6 A
T
J
=125°C
V
GS
= 10 V, I
D
= 1.9 A
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 1.6 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
6
3.5
1
0.5
1.6
1.3
30
1
10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
2
1.5
0.125
0.25
0.085
A
S
V
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
245
130
20
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
15
14
12
4
30
30
25
10
5
1
2
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 1.6 A,
V
GS
= 5 V
3.5
NDS355N Rev. D1
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Source Current
Maximum Pulse Source Current
(Note 2)
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.6 A
0.8
0.6
6
1.2
A
A
V
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
T
J
−
T
A
R
θ
J C
R
θ
CA
t
)
+
(
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz cpper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS355N Rev. D1
Typical Electrical Characteristics
12
2
V
GS
=10V
I
D
, DRAIN-SOURCE CURRENT (A)
6.0
5.0
4.5
R
DS(on)
, NORMALIZED
V
GS
=3.5V
DRAIN-SOURCE ON-RESISTANCE
9
4.0
1.5
4.0
6
4.5
5.0
1
3.5
3
6.0
10
3.0
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
0.5
0
3
I
D
6
, DRAIN CURRENT (A)
9
12
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
1.6
3
DRAIN-SOURCE ON-RESISTANCE
1.4
V
GS
=4.5V
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 1.6A
V
GS
= 4.5V
2.5
R
DS(ON)
NORMALIZED
,
1.2
T J = 125°C
2
1
1.5
25°C
-55°C
0.8
1
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
2
4
6
8
I
D
, DRAIN CURRENT (A)
10
12
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
10
1.2
V
DS
= 10V
8
I
D
, DRAIN CURRENT (A)
125°C
GATE-SOURCE THRESHOLD VOLTAGE (V)
TJ = -55°C
25°C
V
DS
= V
GS
1.1
I
D
= 250µA
V
th
, NORMALIZED
1
6
0.9
4
0.8
2
0.7
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
NDS355N Rev. D1
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
20
I
D
= 250µA
I , REVERSE DRAIN CURRENT (A)
1.1
10
V
GS
= 0V
BV
DSS
, NORMALIZED
1
1.05
T J = 125°C
25°C
0.1
-55°C
1
0.95
0.01
0.9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
S
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
500
300
200
CAPACITANCE (pF)
10
C iss
V
GS
, GATE-SOURCE VOLTAGE (V)
8
I
D
= 1.6A
V
DS
= 5V
C oss
100
10
6
15
50
30
4
f = 1 MHz
V
GS
= 0 V
0.1
0.2
0.5
1
2
5
10
C rss
2
0
30
0
1
2
3
4
5
6
7
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDS355N Rev. D1
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