May 1998
NDS9925A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
4.5 A, 20 V. R
DS(ON)
= 0.060
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.075
Ω
@ V
GS
= 2.7 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
S
ND 5A
2
99
S2
G2
5
6
7
8
4
3
2
1
SO-8
pin
1
S1
G1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDS9925A
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
20
±8
4.5
15
2
(Note 1a)
(Note 1b)
(Note 1c)
V
V
A
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
W
1.6
1
0.9
-55 to 150
°C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
θJA
R
θ
J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
NDS9925A Rev. A
Electrical Characteristics
Symbol
Parameter
OFF CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
I
D(on)
I
S
V
SD
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
= 2.7 V, I
D
= 4 A
V
GS
= 4.5 V, V
DS
= 5 V
20
1
100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
0.4
1
0.06
0.075
V
Ω
A
On-State Drain Current
15
1.3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
A
V
1.2
Notes :
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9925A Rev. A
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration:
Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
343x64x343
5,000
0.0774
0.6060
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
F011
TNR
4,000
13" Dia
343x64x343
8,000
0.0774
0.9696
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0774
0.1182
F852
NDS
9959
Pin 1
SOIC-8 Unit Orientation
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
F63TNLabel
F63TN Label
ESD Label
(F63TNR)3
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration:
Figure 3.0
T
E1
P0
D0
F
K0
Wc
B0
E2
W
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOIC(8lds)
(12mm)
A0
6.50
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0
1.55
+/-0.05
D1
1.60
+/-0.10
E1
1.75
+/-0.10
E2
10.25
min
F
5.50
+/-0.05
P1
8.0
+/-0.1
P0
4.0
+/-0.1
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
0.5mm
maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0
Sketch B (Top View)
Typical
component
center line
Sketch C (Top View)
Component lateral movement
SOIC(8lds) Reel Configuration:
Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
W3
Dim D
min
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel
Option
7" Dia
Dim A
7.00
177.8
13.00
330
Dim B
0.059
1.5
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
7.00
178
Dim W1
0.488 +0.078/-0.000
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
Dim W2
0.724
18.4
0.724
18.4
Dim W3 (LSL-USL)
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
©
1998 Fairchild Semiconductor Corporation
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
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