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RE46C112E8F

产品描述16-bit Microcontrollers - MCU 16B MCU
产品类别模拟混合信号IC    信号电路   
文件大小55KB,共8页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
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RE46C112E8F概述

16-bit Microcontrollers - MCU 16B MCU

RE46C112E8F规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明DIP, DIP8,.3
Reach Compliance Codecompliant
JESD-30 代码R-PDIP-T8
JESD-609代码e3
端子数量8
最高工作温度60 °C
最低工作温度-10 °C
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
电源5,9 V
认证状态Not Qualified
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Matte Tin (Sn) - annealed
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
Base Number Matches1

文档预览

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R&E International
A Subsidiary of Microchip Technology Inc.
RE46C112
Ionization Smoke Detector IC
Product Specification
General Description
The RE46C112 is an ionization type smoke detector IC.
It is intended for applications using ionization type
chambers to detect smoke. When enabled, VOUT is ¼
of either the DETECT input or VDD depending on the
status of the SELECT input. When the Select input is
allowed to float the circuit is in the low current mode
with only the guard amplifier enabled.
Utilizing low power CMOS technology the RE46C112
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217.
Features
Guard Outputs for Ion Detector Input
± 0.75pA Detect Input Current
Microprocessor A/D Compatible Analog Output
Low Quiescent Current Consumption (<10uA)
Available in 8L PDIP or 8L N SOIC
2000V ESD Protection (HBM)
Available in Standard Packaging or RoHS
Compliant Pb Free Packaging
Pin Configuration
1
8
G2
DETECT
G1
VO UT
VDD
VCC
SELECT
VSS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Supply Voltage
Detect Input Voltage Range
SELECT Input Voltage Range
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
V
DD
V
CC
V
INDET
V
INSEL
T
A
T
STG
T
J
VALUE
12.5
6
V
DD
+.3
V
CC
+.3
-10 to 60
-55 to 125
150
UNITS
V
V
V
V
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used
when handling this product. Damage can occur when exposed to extremely high static electrical charge
© 2009 Microchip Technology Inc.
DS22161A-page 1

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