June 1996
NDT454P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-5.9A, -30V. R
DS(ON)
= 0.05
Ω
@ V
GS
= -10V
R
DS(ON)
= 0.07
Ω
@ V
GS
= -6V
R
DS(ON)
= 0.09
Ω
@ V
GS
= -4.5V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
T
A
= 25°C unless otherwise noted
NDT454P
-30
±20
(Note 1a)
Units
V
V
A
±5.9
±15
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT454P Rev. D2
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -24 V, V
GS
= 0 V
V
DS
= -15 V, V
GS
= 0 V
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= -10 V, I
D
= -5.9 A
V
GS
= -6 V, I
D
= -5.2 A
V
GS
= -4.5 V, I
D
= -4.6 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5, V
DS
= -5V
Forward Transconductance
V
DS
= 15 V, I
D
= 5.9 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
950
610
220
pF
pF
pF
-15
-5
10
S
-1
-2.7
0.038
0.046
0.064
0.05
0.07
0.09
A
T
J
= 70°C
-30
-1
-5
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
Ω
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -15 V,
I
D
= -5.9 A, V
GS
= -10 V
V
DD
= -15 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
Ω
10
18
80
45
29
3
11
30
60
120
100
40
ns
ns
ns
ns
nC
NDT454P Rev. D2
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
-1.9
(Note 2)
Units
A
V
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= -5.9 A
-0.85
-1.3
100
V
GS
= 0V, I
F
= -5.9 A, dI
F
/dt = 100 A/µs
P
D
(
t
) =
R
θ
JA
(
t
)
T
J
−
T
A
=
T
J
−
T
A
R
θ
JC
+
R
θ
C
(
t
)
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT454P Rev. D2
Typical Electrical Characteristics
-30
3
V
GS
=-10V
I
D
, DRAIN-SOURCE CURRENT (A)
-25
-6.0
-4.5
-4.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-5.0
2.5
V
GS
= -3.5V
-4.0V
-4.5V
-5.0V
-20
2
-15
-3.5
-10
1.5
-6.0V
1
-3.0
-5
-10V
0
0
-1
-2
-3
-4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-5
0.5
0
-4
-8
-12
I
D
, DRAIN CURRENT (A)
-16
-20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
2
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
I
D
= -5.9A
V
GS
= -10V
V
GS
= -10V
1.5
TJ = 125°C
1.2
1
25°C
1
0.8
-55°C
0.6
-50
0.5
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
-5
-10
I
D
, DRAIN CURRENT (A)
-15
-20
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
-20
1.2
V
DS
= -10V
-16
T = -55°C
J
25
GATE-SOURCE THRESHOLD VOLTAGE
125
V
DS
= V
GS
1.1
-I
D
, DRAIN CURRENT (A)
I
D
= -250µA
V
th
, NORMALIZED
1
-12
0.9
-8
0.8
-4
0.7
0
-1
-2
-3
-4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-5
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDT454P Rev. D2
Typical Electrical Characteristics
(continued)
1.1
20
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-I
S
, REVERSE DRAIN CURRENT (A)
I
D
= -250µA
10
5
V
GS
= 0V
BV
DSS
, NORMALIZED
1
TJ = 125°C
25°C
0.1
-55°C
0.01
0.001
-25
0
T
J
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
, JUNCTION TEMPERATURE (°C)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
3000
2000
, GATE-SOURCE VOLTAGE (V)
10
I
D
= -5.9A
8
V
DS
= -10V
-15V
-20V
CAPACITANCE (pF)
1000
C iss
C oss
6
500
300
200
4
f = 1 MHz
V
GS
= 0 V
C rss
100
0.1
-V
0
1
3
10
30
0
0.3
GS
2
10
20
Q
g
, GATE CHARGE (nC)
30
40
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
-V
DD
t
d(on)
t
on
t
off
t
r
90%
t
d(off)
90%
V
IN
D
R
L
V
OUT
V
OUT
10%
t
f
V
GS
R
GEN
10%
90%
G
DUT
S
V
IN
10%
50%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT454P Rev. D2
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