Philips Semiconductors RF Communications Products
Product specification
High frequency operational amplifier
NE/SE5539
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic
operational amplifier for use in video amplifiers, RF amplifiers, and
extremely high slew rate amplifiers.
Emitter-follower inputs provide a true differential input impedance
device. Proper external compensation will allow design operation
over a wide range of closed-loop gains, both inverting and
non-inverting, to meet specific design requirements.
PIN CONFIGURATION
D, F, N Packages
1
2
3
4
5
6
7
+
–
14
13
12
11
+ INPUT
NC
-V
SUPPLY
NC
- INPUT
NC
FREQUENCY
COMPENS.
NC
FEATURES
•
Bandwidth
–
Unity gain - 350MHz
–
Full power - 48MHz
–
GBW - 1.2GHz at 17dB
V
OS
ADJ
/
A
V
ADJ
NC
GROUND
10 +V
9
8
NC
OUTPUT
•
Slew rate: 600/V
µ
s
•
A
VOL
: 52dB typical
•
Low noise - 4nV
√
Hz typical
•
MIL-STD processing available
APPLICATIONS
Top View
•
High speed datacom
•
Video monitors & TV
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Plastic Small Outline (SO) package
14-Pin Ceramic Dual In-Line Package
14-Pin Ceramic Dual In-Line Package
•
Satellite communications
•
Image processing
•
RF instrumentation & oscillators
•
Magnetic storage
•
Military communications
TEMPERATURE RANGE
0 to +70°C
0 to +70°C
0 to +70°C
-55 to +125°C
ORDER CODE
NE5539N
NE5539D
NE5539F
SE5539F
DWG #
0405B
0175D
0581B
0581B
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
V
CC
P
DMAX
Supply voltage
Maximum power dissipation,
T
A
= 25°C (still-air)
2
F package
N package
D package
Operating temperature range
NE
SE
Storage temperature range
Max junction temperature
Lead soldering temperature (10sec max)
PARAMETER
RATING
±12
UNITS
V
1.17
1.45
0.99
0 to 70
-55 to +125
-65 to +150
150
+300
W
W
W
°C
°C
°C
°C
°C
T
A
T
STG
T
J
T
SOLD
NOTES:
1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage
limits may be exceeded if current is limited to less than 10mA.
2. Derate above 25°C, at the following rates:
F package at 9.3mW/°C
N package at 11.6mW/°C
D package at 7.9mW/°C
April 15, 1992
229
853-0814 06456
Philips Semiconductors RF Communications Products
Product specification
High frequency operational amplifier
NE/SE5539
EQUIVALENT CIRCUIT
(12) FREQUENCY COMP.
(10) +V
CC
R
18
(–) 14
INVERTING INPUT
R
19
R
3
R
5
R
2
(+) 1
NON–INVERTING
INPUT
R
6
Q
1
Q
2
Q
4
Q
6
R
8
Q
5
Q
3
Q
7
Q
8
R
20
R
21
R
1
R
4
R
9
R
10
2.2k
(8) OUTPUT
(7) GRD
R
13
Q
10
R
11
Q
11
R
12
R
15
R
14
R
16
R
17
(3) –V
CC
5
R
7
Q
9
DC ELECTRICAL CHARACTERISTICS
V
CC
=
±8V,
T
A
= 25
°
C; unless otherwise specified.
SYMBOL
V
OS
PARAMETER
Input offset voltage
∆V
OS
/∆T
Over temp
I
OS
Input offset current
∆I
OS
/∆T
Over temp
I
B
Input bias current
∆I
B
/∆T
CMRR
R
IN
R
OUT
Common mode rejection ratio
Input impedance
Output impedance
F = 1kHz, R
S
= 100Ω, V
CM
±1.7V
Over temp
70
70
T
A
= 25
°
C
T
A
= 25
°
C
TEST CONDITIONS
Over temp
V
O
= 0V, R
S
= 100Ω
T
A
= 25
°
C
SE5539
MIN
TYP
2
2
5
0.1
0.1
0.5
6
5
10
80
80
100
10
100
10
70
25
13
5
10
80
20
3
1
0.5
2
MAX
5
3
2.5
5
5
mV
µV/°C
µA
nA/°C
µA
nA/°C
dB
kΩ
Ω
MIN
NE5539
TYP
MAX
UNITS
April 15, 1992
230
Philips Semiconductors RF Communications Products
Product specification
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS
(Continued)
V
CC
=
±8V,
T
A
= 25
°
C; unless otherwise specified.
SYMBOL
V
OUT
PARAMETER
Output voltage swing
TEST CONDITIONS
R
L
= 150Ω to GND and
470Ω to -V
CC
R
L
= 25Ω to GND
Over temp
R
L
= 25Ω to GND
T
A
= 25°C
+Swing
-Swing
+Swing
-Swing
+Swing
-Swing
+2.3
-1.5
+2.5
-2.0
+3.0
-2.1
+3.1
-2.7
14
14
11
11
300
18
17
15
14
1000
200
47
52
1000
57
11
15
14
18
SE5539
MIN
TYP
MAX
MIN
+2.3
-1.7
NE5539
TYP
+2.7
-2.2
MAX
UNITS
V
V
OUT
Output voltage swing
V
I
CC+
I
CC-
PSRR
A
VOL
A
VOL
Positive supply current
Negative supply current
Power supply rejection ratio
Large signal voltage gain
Large signal voltage gain
V
O
= 0, R
1
=
∞,
Over temp
V
O
= 0, R
1
=
∞,
T
A
= 25°C
V
O
= 0, R
1
=
∞,
Over temp
V
O
= 0, R
1
=
∞,
T
A
= 25°C
∆V
CC
=
±1V,
Over temp
∆V
CC
=
±1V,
T
A
= 25°C
V
O
= +2.3V, -1.7V, R
L
= 150Ω to
GND, 470Ω to -V
CC
V
O
= +2.3V, -1.7V
R
L
= 2Ω to GND
Over
temp
T
A
= 25°C
Over
temp
T
A
= 25°C
46
48
mA
mA
µV/V
dB
dB
47
60
53
58
52
57
dB
A
VOL
Large signal voltage gain
V
O
= +2.5V, -2.0V
R
L
= 2Ω to GND
DC ELECTRICAL CHARACTERISTICS
V
CC
=
±6V,
T
A
= 25
°
C; unless otherwise specified.
SYMBOL
V
OS
I
OS
I
B
CMRR
I
CC+
I
CC-
PSRR
PARAMETER
Input offset voltage
Input offset current
Input bias current
Common-mode rejection ratio
Positive supply current
Negative supply current
Power supply rejection ratio
∆V
CC
=
±1V
Over
V
OUT
Output voltage swing
R
L
= 150Ω to GND
and 390Ω to –V
CC
temp
T
A
=
25°C
V
CM
=
±1.3V,
R
S
= 100Ω
Over temp
T
A
= 25°C
Over temp
T
A
= 25°CmA
Over temp
T
A
= 25°C
+Swing
–Swing
+Swing
–Swing
+1.4
–1.1
+1.5
–1.4
+2.0
–1.7
+2.0
–1.8
V
TEST CONDITIONS
Over temp
T
A
= 25°C
Over temp
T
A
= 25°C
Over temp
T
A
= 25°C
70
SE5539
MIN
TYP
2
2
0.1
0.1
5
4
85
11
11
8
8
300
14
13
11
10
1000
MAX
5
3
3
1
20
10
UNITS
mV
µA
µA
dB
mA
mA
µV/V
April 15, 1992
231
Philips Semiconductors RF Communications Products
Product specification
High frequency operational amplifier
NE/SE5539
AC ELECTRICAL CHARACTERISTICS
V
CC
=
±8V,
R
L
= 150Ω to GND and 470Ω to -V
CC
, unless otherwise specified.
SYMBOL
BW
t
S
SR
t
PD
PARAMETER
Gain bandwidth product
Small signal bandwidth
Settling time
Slew rate
Propagation delay
Full power response
Full power response
Input noise voltage
Input noise current
NOTES:
1. External compensation.
TEST CONDITIONS
A
CL
= 7, V
O
= 0.1 V
P-P
A
CL
= 2, R
L
= 150Ω
1
A
CL
= 2, R
L
=
A
CL
= 2, R
L
=
A
CL
= 2, R
L
=
A
V
= 7, R
L
=
1MHz
150Ω
1
150Ω
1
150Ω
1
150Ω
1
SE5539
MIN
TYP
1200
110
15
600
7
48
20
4
6
MAX
MIN
NE5539
TYP
1200
110
15
600
7
48
20
4
6
MAX
UNITS
MHz
MHz
ns
V/µs
ns
MHz
MHz
nV/√Hz
pA/√Hz
A
CL
= 2, R
L
= 150Ω
1
R
S
= 50Ω, 1MHz
AC ELECTRICAL CHARACTERISTICS
V
CC
=
±6V,
R
L
= 150Ω to GND and 390Ω to -V
CC
, unless otherwise specified.
SYMBOL
BW
t
S
SR
t
PD
PARAMETER
Gain bandwidth product
Small signal bandwidth
Settling time
Slew rate
Propagation delay
Full power response
NOTES:
1. External compensation.
TEST CONDITIONS
A
CL
= 7
A
CL
=
2
1
A
CL
= 2
1
A
CL
= 2
1
A
CL
=
2
1
A
CL
= 2
1
SE5539
MIN
TYP
700
120
23
330
4.5
20
MAX
UNITS
MHz
ns
V/µs
ns
MHz
TYPICAL PERFORMANCE CURVES
NE5539 Open-Loop Phase
60
0
50
40
GAIN (dB)
NE5539 Open-Loop Gain
PHASE (DEG)
90
30
180
20
270
10
360
1 MHz
0
1 MHz
10MHz
100MHz
1GHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
FREQUENCY (Hz)
April 15, 1992
232
Philips Semiconductors RF Communications Products
Product specification
High frequency operational amplifier
NE/SE5539
TYPICAL PERFORMANCE CURVES
(Continued)
Power Bandwidth (SE)
4
5
3
p–p OUTPUT (V)
4
3dB B.W
3
GAIN (—2)
V
CC
= +8V
R
L
= 2kΩ
p–p OUTPUT (V)
3dB B.W.
2
V
CC
= +6V
R
L
= 150kΩ
GAIN (—2)
Power Bandwidth (NE)
1
2
0
1 MHz
10MHz
FREQUENCY (Hz)
100MHz
300Mhz
10MHz
FREQUENCY (Hz)
100MHz
300Mhz
1
1 MHz
SE5539 Open-Loop Gain vs Frequency
REF
3.04V
P-P
dB BELOW REF
–2
–4
–6
–8
GAIN (–7)
R
L
= 150Ω
–12
10MHz
FREQUENCY (Hz)
100MHz
300Mhz
1MHz
Power Bandwidth
50
40
GAIN (dB)
30
20
10
0
o
1 MHz
V
CC
= +6V
R
L
= 126Ω
–10
10MHz
FREQUENCY (Hz)
100MHz
300MHz
SE5539 Open-Loop Phase vs Frequency
Gain Bandwidth Product vs Frequency
0°
PHASE (DEG)
GAIN (dB)
45°
90°
V
CC
=
±6V
R
L
= 126Ω
10MHz
FREQUENCY (Hz)
100MHz
300MHz
22
20
18
16
A
V
= X10
V
CC
=
±6V
R
L
= 150Ω
A
V
= X7.5
3dB BANDWIDTH
135°
180°
1MHz
3dB BANDWIDTH
14
12
1MHz
10MHz
FREQUENCY (Hz)
100MHz
300MHz
NOTE:
Indicates typical
distribution –55°C
≤
T
A
≤
125°C
April 15, 1992
233
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