US4881
Bipolar Hall Switch
Low Voltage and Very High Sensitivity
Features and Benefits
Operating voltage range from 2.2V to
m
18V
Very high magnetic sensitivity
CMOS technology
Chopper-stabilized amplifier stage
tage
Low current consumption
Open drain output
Thin SOT23 3L and flat TO-92 3L
both RoHS Compliant
packages
Application Exam
mples
Automotive, Indus
strial and Consumer
Solid-state switch
Brushless DC motor commutation
otor
Speed detection
Linear position dete
detection
Angular position d
detection
Proximity detection
on
Ordering Code
Product Code
US4881
US4881
US4881
US4881
US4881
US4881
Temperature Code
E
K
L
E
K
L
Package Code
UA
UA
UA
SE
SE
SE
Option Code
AAA-000
AAA-000
AAA-000
AAA-000
AAA-000
AAA-000
Packing Form Code
BU
BU
BU
RE
RE
RE
Legend:
Temperature Code:
Package Code:
Packing Form:
ordering example:
L for Tempera
Temperature Range -40° to 150°
C
C
E for Temperature Range -40° to 85°
C
C
K for Temperature Range -40° to 125°C
C
UA for TO-92(Flat), SE for TSOT3
92(Flat),
RE for reel, BU for Bulk,
AAA-000-BU
US4881EUA-AAA
1 Functional Diagram
2 General Descriptio
ion
The Melexis US4881 is a bipol Hall-effect switch
lar
designed in mixed signal CMO technology.
OS
The device integrates a vol
ltage regulator, Hall
sensor with dynamic offset c
cancellation system,
Schmitt trigger and an open-dr
rain output driver, all
in a single package.
The low operating voltage and extended choice of
temperature ranges make it suitable for use in
automotive, industrial and con
onsumer low voltage
applications.
The device is delivered in a Thin Small Outline
Transistor (TSOT) for surface mount process and
e
in a Plastic Single In-Line (TO
O-92 flat) for through-
hole mount.
Both 3-lead packages are RoHS compliant.
3901004881
Rev 013
Page 1 of 12
Data Sheet
Mar/12
US4881
Bipolar Hall Switch
Low Voltage and Very High Sensitivity
Table of Contents
1 Functional Diagram ........................................................................................................ 1
2 General Description ........................................................................................................ 1
3 Glossary of Terms .......................................................................................................... 3
4 Absolute Maximum Ratings ........................................................................................... 3
5 Pin Definitions and Descriptions ................................................................................... 3
6 General Electrical Specifications .................................................................................. 4
7 Magnetic Specifications ................................................................................................. 4
8 Output Behaviour versus Magnetic Pole ...................................................................... 4
9 Detailed General Description ......................................................................................... 5
10 Unique Features ............................................................................................................ 5
11 Performance Graphs .................................................................................................... 6
11.1 Magnetic parameters vs. T
A
.....................................................................................................................6
11.2 Magnetic parameters vs. V
DD
...................................................................................................................6
11.3 V
DSon
vs. T
A
..............................................................................................................................................6
11.4 V
DSon
vs. V
DD
............................................................................................................................................6
11.5 I
DD
vs. T
A
..................................................................................................................................................6
11.6 I
DD
vs. V
DD
................................................................................................................................................6
11.7 I
OFF
vs. T
A
.................................................................................................................................................7
11.8 I
OFF
vs. V
DD
...............................................................................................................................................7
12 Test Conditions ............................................................................................................. 7
12.1 Supply Current .........................................................................................................................................7
12.2 Output Saturation Voltage .......................................................................................................................7
12.3 Output Leakage Current ..........................................................................................................................7
12.4 Magnetic Thresholds ...............................................................................................................................7
13 Application Information................................................................................................ 8
13.1 Typical Three-Wire Application Circuit ....................................................................................................8
13.2 Two-Wire Circuit ......................................................................................................................................8
13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................8
13.4 Application Comments .............................................................................................................................8
14 Standard information regarding manufacturability of Melexis products with
different soldering processes........................................................................................... 9
15 ESD Precautions ........................................................................................................... 9
16 Package Information................................................................................................... 10
16.1 SE Package (TSOT-3L).........................................................................................................................10
16.2 UA Package (TO-92 flat) .......................................................................................................................11
17 Disclaimer.................................................................................................................... 12
Data Sheet
Mar/12
3901004881
Rev 013
Page 2 of 12
US4881
Bipolar Hall Switch
Low Voltage and Very High Sensitivity
3 Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
BLDC
Units of magnetic flux density:
1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) – also referred with the Melexis
package code “SE”
Electro-Static Discharge
Brush-Less Direct-Current
4 Absolute Maximum Ratings
Parameter
Symbol
Supply Voltage
V
DD
Supply Current
I
DD
Output Voltage
V
OUT
Output Current
I
OUT
Storage Temperature Range
T
S
Maximum Junction Temperature
T
J
ESD Sensitivity (AEC Q100 002)
-
Table 1: Absolute maximum ratings
Value
20
50
20
50
-50 to 150
165
2.5
Units
V
mA
V
mA
°C
°C
kV
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-
rated conditions for extended periods may affect device reliability.
Operating Temperature Range
Temperature Suffix “E”
Temperature Suffix “K”
Temperature Suffix “L”
Symbol
T
A
T
A
T
A
Value
-40 to 85
-40 to 125
-40 to 150
Units
°C
°C
°C
5 Pin Definitions and Descriptions
SE Pin
№
UA Pin
№
Name
1
1
VDD
2
3
OUT
3
2
GND
Table 2: Pin definitions and descriptions
Type
Supply
Output
Ground
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
SE package
UA package
3901004881
Rev 013
Page 3 of 12
Data Sheet
Mar/12
US4881
Bipolar Hall Switch
Low Voltage and Very High Sensitivity
6 General Electrical Specifications
DC Operating Parameters T
A
= 25
o
C, V
DD
= 12V (unless otherwise specified)
Parameter
Symbol
Supply Voltage
V
DD
Supply Current
I
DD
Output Saturation Voltage
V
DSon
Output Leakage Current
I
OFF
Output Rise Time
t
r
Output Fall Time
t
f
Maximum Switching Frequency
F
SW
SE Package Thermal Resistance
R
TH
UA Package Thermal Resistance
R
TH
Table 3: Electrical specifications
Test Conditions
Operating
B < B
RP
I
OUT
= 20mA, B > B
OP
B < B
RP,
V
OUT
= 24V
R
L
= 1k , C
L
= 20pF
R
L
= 1k , C
L
= 20pF
Single layer (1S) Jedec board
Min
2.2
1.5
Typ
Max
18
5
0.5
10
Units
V
mA
V
µA
µs
µs
kHz
°C/W
°C/W
0.01
0.25
0.25
10
301
200
7 Magnetic Specifications
DC Operating Parameters T
A
= 25ºC, V
DD
= 12V (unless otherwise specified)
Parameter
Symbol
Operating Point
B
OP
Release Point
B
RP
Hysteresis
B
HYST
Table 4: Magnetic specifications
Test Conditions
Min
-1
-6
2
Typ
Max
6
1
6
Units
mT
mT
mT
Note:
For typical values, please refer to the performance graphs in section 11
8 Output Behaviour versus Magnetic Pole
DC Operating Parameters T
A
= -40
o
C to 150
o
C, V
DD
= 2.2V to 18V (unless otherwise specified)
Parameter
Test Conditions (SE) OUT (SE) Test Conditions (UA)
South pole
B < B
RP
High
B > B
OP
North pole
B > B
OP
Low
B < B
RP
Table 5: Output behaviour versus magnetic pole
OUT (UA)
Low
High
South pole
North pole
North pole
OUT = high
South pole
OUT = low (V
DSon
)
OUT = high
OUT = low (V
DSon
)
SE package
UA package
3901004881
Rev 013
Page 4 of 12
Data Sheet
Mar/12
US4881
Bipolar Hall Switch
Low Voltage and Very High Sensitivity
9 Detailed General Descri
ription
Based on mixed signal CMOS techn
hnology, Melexis US4881 is a Hall-effect device with very high magnetic
h
sensitivity. It allows using generic magnet weak magnets or larger air gap.
agnets,
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
es
et
with Hall sensors and amplifiers. The CMOS technology makes this advanced tech
T
hnique possible and
contributes to smaller chip size and lower current consumption when compared to the bipolar technology.
The small chip size is also an important factor to minimize the effect of physical stress.
tant
This combination results in more stabl magnetic characteristics and enables faster and m
le
more precise design.
The operating voltage from 2.2V to 18V, “L”, “K” and “E” operating temperature ranges and low current
anges
consumption make this device espe
pecially suitable for automotive, industrial and con
onsumer low voltage
applications.
The output signal is open-drain type. S
Such output allows simple connectivity with TTL or CM
CMOS logic by using
a pull-up resistor tied between a pull-u voltage and the device output.
up
10 Unique Features
The US4881 exhibits bipolar magnet switching characteristics. Therefore, it operates with both south and
agnetic
north poles.
Typically, the device behaves as a latc with symmetric
ch
operating and release switching points (B
OP
=
RP
|). This means
=|B
magnetic fields with equivalent strength and opposite direction
nd
drive the output high and low.
Removing the magnetic field (B→0) keeps the output in its
eeps
previous state. This latching property defines the device as a
nes
magnetic memory.
Latch characteristic
Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (B
OP
g
ar
and B
RP
strictly positive) or unipolar negative switch with inversed output (B
OP
and B
RP
s
n
strictly negative). That
is the output can be set high and low by using only one magnetic pole. In such case, rem
w
moving the magnetic
field changes the output level.
Unipolar positive switch character
eristic
Unipolar negative switch char
haracteristic
In latch, positive or negative switch behaviour, a magnetic hysteresis B
HYST
keeps B
OP
and B
RP
separated by
be
nd
a minimal value. This hysteresis prevents the output from oscillating near the switching po
ents
oint.
Data Sheet
3901004881
Page 5 of 12
Mar/12
Rev 013
嵌入式系统
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