Sirenza Microdevices NGA-589 is a high performance InGaP/
GaAs HBT MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance
up to 5.5 GHz with excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. At 850 Mhz and 80mA , the NGA-
589 typically provides +39 dBm output IP3, 20 dB of gain, and
+19 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @T
L
=+25°C
24
GAIN
NGA-589
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
High Gain : 19.2 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
Operates From Single Supply
Low Thermal Resistance Package
0
-10
IRL
Return Loss (dB)
18
Gain (dB)
12
ORL
-20
-30
-40
0
1
2
3
4
Frequency (GHz)
5
6
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Units
dB
dBm
dBm
M Hz
dB
dB
dB
V
mA
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
4.5
72
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
18.0
Ty p.
20.0
19.2
18.9
19.0
18.8
39.0
34.0
5500
15.5
18.0
3.7
4.9
80
111
5.3
88
Max.
22.0
6
0
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 80 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100376 Rev C
Preliminary
NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Sy mbol
Parameter
Unit
100
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Pow er at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
20.5
37.7
18.3
27.0
20.9
22.6
3.8
20.3
38.8
19.0
24.5
21.4
22.7
3.6
20.0
39.0
19.0
21.8
22.1
22.8
3.5
19.2
34.0
18.8
15.5
18.0
23.2
3.7
19.0
31.4
17.6
13.2
15.9
23.4
3.6
18.4
27.7
15.4
11.7
19.3
24.0
3.8
Test Conditions:
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Absolute Maximum Ratings
Noise Figure vs. Frequency
7
Noise Figure (dB)
6
5
4
3
2
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Absolute Limit
1
20
mA
V
D
= 4.9 V, I
D
= 80 mA
6V
+15 dBm
+150°C
-40°C to +85°C
+150°C
T
L
= 25ºC
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
0
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
Bias Conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
OIP
3
vs. Frequency
45
40
OIP
3
(dBm)
35
30
25
20
15
0
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
V
D
= 4.9 V, I
D
= 80 mA
P
1dB
vs. Frequency
22
V
D
= 4.9 V, I
D
= 80 mA
+25°C
-40°C
+85°C
T
L
20
P
1dB
(dBm)
18
16
14
12
10
0
0.5
1
T
L
+25°C
-40°C
+85°C
1.5
2
2.5
Frequency (GHz)
3
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100376 Rev C
Preliminary
NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
|
S
21
|
vs. Frequency
24
V
D
= 4.9 V, I
D
= 80 mA
|
S
11
|
vs. Frequency
0
-10
S
11
(dB)
-20
-30
V
D
= 4.9 V, I
D
= 80 mA
18
S
21
(dB)
12
6
T
L
0
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
6
+25°C
-40°C
+85°C
0
1
2
3
4
Frequency (GHz)
5
6
|
S
12
|
vs. Frequency
-10
V
D
= 4.9 V, I
D
= 80 mA
|
S
22
|
vs. Frequency
+25°C
-40°C
+85°C
0
-10
S
22
(dB)
-20
-30
V
D
= 4.9 V, I
D
= 80 mA
T
L
-15
S
12
(dB)
-20
-25
T
L
-30
0
1
2
3
4
Frequency (GHz)
5
6
-40
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
6
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 39 Ohms *
95
90
+25°C
-40°C
V
D
vs. Temperature for Constant I
D
= 80 mA
5.50
5.35
80
75
70
65
+85°C
V
D
(Volts)
I
D
(mA)
85
5.20
5.05
4.90
4.75
4.60
4.6
4.8
4.9
V
D
(Volts)
5.1
5.2
-40
-15
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100376 Rev C
Preliminary
NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
Basic Application Circuit
R
BIAS
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
1 uF
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
4
NGA-589
3
C
B
RF out
Recommended Bias Resistor Values for I
D
=80mA
Supply Voltage(V
S
)
R
BIAS
7.5 V
33
8V
39
10 V
62
12 V
91
2
V
S
R
BIAS
N5
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
L
C
C
D
C
B
C
B
Pin #
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
Part Identification Marking
The part will be marked with an N5 designator on the
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