Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products.
Preliminary
Preliminary
NGA-689
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Small Signal Gain vs. Frequency
16
14
dB
12
10
8
6
0
2
4
Frequency GHz
Product Features
11.7dB Gain, 18.9 dBm P1dB at 1950Mhz
Cascadable 50 ohm: 1.4:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
U nits
Min.
Ty p.
19.9
18.9
17.9
36.9
33.6
32.1
11.9
11.7
11.6
5000
1.4:1
1.4:1
19.7
19.5
19.4
6.0
5.8
91
Max.
6
8
Sy mbol
Parameters: Test C onditions:
Z
0
= 50 Ohms, I
D
= 80 mA, T = 25ºC
Output Power at 1dB C ompressi on
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
P
1dB
dB m
dB m
dB m
dB m
dB m
dB m
dB
dB
dB
MHz
IP
3
Thi rd Order Intercept Poi nt
Power out per tone = 0 dBm
S
21
Bandwi dth
S
11
S
22
S
12
NF
V
D
R
th
, j-l
Small Si gnal Gai n
D etermi ned by S11 and S22 values
Input VSWR
Output VSWR
Reverse Isolati on
Noi se Fi gure
D evi ce Voltage
Thermal Resi stance (juncti on - lead)
f = D C - 5000 MHz
f = D C - 5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 2000 MHz
-
-
dB
dB
dB
dB
V
ºC /W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101442 Rev A
1
Preliminary
Preliminary
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
OP
)/R
th
,j-l
Parameter
Supply Current
Device Voltage
Operating Temperature
Maximum Input Pow er
Storage Temperature Range
Operating Junction Temperature
Value
120
6.7
-40 to +85
+13
-40 to +150
+150
Unit
mA
V
ºC
dBm
ºC
ºC
Key parameters, at typical operating frequencies:
Parameter
500 MH z
Gai n
Output IP3
Output P1dB
Input Return Loss
Reverse Isolati on
850 MH z
Gai n
Output IP3
Output P1dB
Input Return Loss
Reverse Isolati on
1950 MH z
Gai n
Output IP3
Output P1dB
Input Return Loss
Reverse Isolati on
2400 MH z
Gai n
Output IP3
Output P1dB
Input Return Loss
Reverse Isolati on
Ty pical
25ºC
12.0
37.2
19.9
19.6
19.7
11.9
36.9
19.9
18.5
19.7
11.7
33.6
18.9
16.0
19.5
11.6
32.1
17.9
15.9
19.4
Test C ondition
U nit
dB
dB m
dB m
dB
dB
dB
dB m
dB m
dB
dB
dB
dB m
dB m
dB
dB
dB
dB m
dB m
dB
dB
(I
D
= 80mA, unless otherwise noted)
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary
Preliminary
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Pin #
1
Function
D escription
RF IN
RF i nput pi n. Thi s pi n requi res the use of
an external D C blocki ng capaci tor chosen
for the frequency of operati on.
GND
C onnecti on to ground. For best
performance use vi a holes (as close to
ground leads as possi ble) to reduce lead
i nductance.
RF OUT/ RF output and bi as pi n. Bi as should be
BIAS
suppli ed to thi s pi n through an external
seri es resi stor and RF choke i nductor.
Because D C bi asi ng i s present on thi s
pi n, a D C blocki ng capaci tor should be
used i n most appli cati ons (see appli cati on
schemati c). The supply si de of the bi as
network should be well bypassed.
GND
Same as Pi n 2.
D ev ice Schematic
2
3
4
Application Schematic
R ecommended B ias R esistor Values
Supply
Voltage(Vs)
Rbi as (Ohms)
8V
27
9V
39
12V
75
Cd1
Cd2
R bias
V
s
For 8V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
