NJG1102F1
LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL
DESCRIPTION
NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.
nFEATURES
lLow
voltage operation
lLow
current consumption
lHigh
small signal gain
lLow
noise figure
lHigh
Input IP3
lHigh
output IP3
lPackage
nPIN
CONFIGURATION
nPACKAGE
OUTLINE
NJG1102F1
+2.7V typ.
3mA typ.
17dB typ. @f=820MHz
1.4dB typ. @f=820MHz
-3dBm typ. @f=820.0+820.1MHz
14dBm typ. @f=820.0+820.1MHz
MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
F1 TYPE
(Top View)
1
6
Pin connection
2
5
1.LNAOUT
2.NC
3.GND
4.GND
5.GND
6.LNAIN
3
4
Note:
is package orientation mark.
-1-
NJG1102F1
nTYPICAL
CHARACTERISTICS
NF,Gain vs. frequency
(V =2.7V,I =3mA)
3
2.8
2.6
2.4
DD
DD
S21,S11,S22,S12 vs. frequency
20
18
16
14
12
10
8
6
25
20
15
(V
DD
=2.7V,I
DD
=3mA)
50
40
30
Gain(dB)
S21,S11,S22(dB)
Gain
10
5
0
-5
-10
-15
-20
-25
0
0.2
0.4
0.6
0.8
1
1.2
S21
20
10
0
-10
NF(dB)
2.2
2
1.8
1.6
1.4
1.2
1
0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98
1
NF
4
2
0
S22
S12
S11
-20
-30
-40
-50
1.4
1.6
1.8
2
frequency(GHz)
frequency(GHz)
Pin vs. Pout
(V =2.7V,I =3mA,f=820MHz)
10
5
0
-5
-10
-15
-20
-25
-30
-40
DD
DD
Pin vs. Pout,IM3
(V =2.7V,I =3mA,f=820+820.1MHz)
10
0
-10
DD
DD
Pout
P-1dB=+0.8dBm
Pout,IM3(dBm)
Pout(dBm)
-20
-30
-40
-50
-60
IM3
IIP3=-3.5dBm
-35
-30
-25
-20
-15
-10
-5
0
Pin(dBm)
-70
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin(dBm)
DD
1.7
Gain vs. V
17.5
NF,I
DD
vs. V
DD
3
( f=820MHz )
( f=820MHz )
I
1.6
17
DD
2.9
Gain(dB)
16.5
NF(dB)
16
1.4
15.5
1.3
2.7
15
2.6
14.5
2.5
3
3.5
4
4.5
5
1.2
2.5
3
3.5
4
DD
2.5
4.5
5
V
DD
(V)
V (V)
-3-
DD
NF
I (mA)
1.5
2.8
S12(dB)
NJG1102F1
nTYPICAL
CHARACTERISTICS
S21 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
25
20
15
10
DD
DD
S12 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
50
40
30
20
DD
DD
S21(dB)
5
0
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
S12(dB)
10
0
-10
-20
-30
-40
-50
0
2
4
6
8
10
12
14
16
18
20
frequency(GHz)
frequency(GHz)
S11 vs. frequency(~20GHz)
25
20
15
10
S22 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
25
20
15
10
DD
DD
(V
DD
=2.7V,I
DD
=3mA)
S11(dB)
5
0
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
S22(dB)
5
0
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
frequency(GHz)
frequency(GHz)
-5-
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