an
AMP
company
==
z
I
RF M’OSFET
2 - 175 MHz
Features
Power Transistor,
4OW,28V
DU2840S
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source
Gate-Source
Drain-Source
Voltage
Voltage
Current
1
1 Symbol
V DS
V GS
‘0s
PD
T,
T STG
8 JC
1
(
Rating
65
20
Units
V
V
1
*
W
“C
“C
1
A
8
125
200
-55 to +150
1.4
Power Dissipation
JunctionTemperature
StorageTemperature
Thermal Resistance
24.64
24.09
.970
.980
B
i 18.29 t 18.54 1 ,720 1 ,730
D
“CiW
E
9.47
&22
564
292
9.73
6.48
5.79
3.30
-373
.245
,222
.115
,393
255
E28
.I30
F
m-
G
Electrical Characteristics
Parameter
Drain-Source
I~~~
Drain-Source
Gate-Source
Breakdown
Voltage
at 25°C
)
)
Symbol
BV,,,
‘DSS
’05s
V GSrnHI
GM
C 15s
C 055
I
1 Min
1
55
1 Max
1
-
2.0
2.0
( Units
)
V
mA
pA
V
S
pF
pF
pF
1 dB
%
-
)
) V,,=O.OV,
V,,=28.0
v,,=20.0
V,,=lO.O
V,,=lO.O
V,=28.0
V,,=28.0
V,,=28.0
1 V,,=28.0
V,,=28.0
V,,=28.0
l,,=lO.OmA
V, V,,=O.O V
Test Conditions
I
I
Leakage Current
Leakage Current
v, v,,=o.o
v
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load MismatchTolerance
Specifications
2.0
1
6.0
-
90
80
16
V, 1,,=200.0 mA
V,
1,,=2000.0
V, F=l .O MHz
V. F=l .O MHz
V, F=l .O MHz
V, I,,=200
V, I,,=200
V, I,,=200
mA, P,,,-40.0
_.
mA, P,,=40.0
mA, P,,=40.0
W, F=l75
MHz
I
mA,
AVo,=l .O
V, 80 us Pulse
C E1c.s
--
G,
‘1D
1
13
60
-
-
-
3O:l
W, F=175 MHz
W, F=175 MHz
VSWR-T
Subject to Change Without Notice.
M/A-COM,
North
America:
Tel.
Fax
(800)
(800)
366-2266
618-8883
=
Asia/Pacific:
Tel.
Fax
+81 (03) 3226-1671
~81 (03) 3226-1451
=
Europe:
Tel.
Fax
+44 (1344)
+44 (1344)
inc.
869 595
300 020
RF MOSFET Power Transistor,
4OW, 28V
DU2840S
V2.00
Typical Broadband Performance Curves
GAIN vs FREQUENCY
V,,=28
V I,,=200 mA
Po,p40
EFFICIENCY
W
1
vs FREQUENCY
mA P,,,=40
W
301
V,,=28
V I,,=200
10
0
,-
25
50
FREQUENCY
100
(MHz)
150
180
0
25
50
FREOUENCY
loo
(MHz)
150
175
POWER OUTPUT vs POWER INPUT
60
V,,=28
V IDO= 00 mA
POWER OUTPUT
F=l75
vs SUPPLY
VOLTAGE
MHz I,,=200
mA P,,=l .O W
0.3
0.5
POWER INPUT (W)
29
SUPPLY VOLTAGE
(V)
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800)
Fax (800)
366-2266
618-8883
s
Asia/Pacific:
Tel.
Fax
+81
+81
(03) 3226-1671
(03) 3226-1451
n
Europe:
Tel.
Fax
+44 (1344)
+44 (1344)
869 595
300 020
RF
MOSFET Power Transistor,
4OW, 28V
Typical Device Impedance
Frequency (MHz)
30
50
Z,, (OHMS)
12.0-j6.8
10.0 - i 6.5
1 6.0 - i 5.5
1.1
ZLoAD
(OHMS)
6.5 -j 1.5
6.0 - i 1.8
1 5.5-il.8
3.5
- j 1.8
I
100
200
- j 3.0
V,,=28 V, I,,=200 mA, P,,,=40 Watts
Z,, is the series equivalent input impedance of the device from gate to source.
Z LOAD the series equivalent load impedance as measured from drain to ground.
is
RF Test Fixture
VGS
J3
VDS
J4
)
VDS = 28 VOLTS
IDQ = 200mA
I
A-
T
1
c9
Rl
RF IN
Jl
Cl
IY
Al
Ll
-
-
I
Ql
L2
L3
RF OUT
C8
IY
Al
c7
I
J2
1.
b
C6
‘I
-
PARTS LIST
Cl ,C?,C8
c2
C3,C6
C-4$5
c9
Ll
l2
L3
TRIMMER
TRIMMER
CAPACITOR
CAPACITOR
5OpF
CAPACITOR
CAPACITOR
0.004uF
5OuF 50 VOLT
4-4OpF
9-18OpF
CAPACITOR
FEEDTHROUGH
ELECTROLYTIC
NO. 12 AWG COPPER WIRE X 1.25”
NO. 12 AWG COPPER WIRE X 1.50”
8 TURNS OF NO. 22 AWG ENAMEL WIRE ON
‘0.25”. CLOSE WOUND
Rl
01
BOARD
RESISTOR
DU2840S
FR4 0.062
1 OOK OHMS
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
H
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
