NJG1312PC1
SPDT SWITCH DRIVER AMPLIFIRE GaAs MMIC
nGENERAL
DESCRIPTION
NJG1312PC1 is a GaAs MMIC mainly designed for CDMA
800MHz band cellular phone handsets.
This Ic features low current consumption and variable gain.
An ultra small & thin FFP package is adopted.
nPACKAGE
OUTLINE
NJG1312PC1
nFEATURES
lLow
supply voltage operation
lLow
current consumption
lHigh
gain
lPout
at 1dB Gain Compression point
lUltra
small & thin package
nPIN
CONFIGURATION
+2.9V typ.
17mA typ. @ P
out
=+5.6dBm
19dB typ. @ 900MHz
+10dBm typ. @ 900MHz
FFP16-C1 (Mount Size: 2.5x2.5x0.85mm)
FFP16 Type
(Top View)
12
11
10
9
13
14
15
16
2
8
7
6
5
Pin Connection
1.PC 9.RF
out
2.GND 10.GND
3.GND 11.P2
4.RF
in
12. V
CTR2
5.NC 13. V
CTR1
6.GND 14.P1
7.GND 15.GND
8.BPC 16.GND
1
3
4
-1-
NJG1312PC1
nTERMINAL
INFORMATION
No.
1
2
3
4
5
6
7
8
SYMBOL
PC
GND
GND
RF
in
NC
GND
GND
BPC
DESCRIPTIONS
RF output terminal of SW.
Ground terminal.
Ground terminal.
RF signal input terminal of driver amplifier.
Neutral terminal. Should be connected to the ground.
Ground terminal.
Ground terminal.
Source electrode terminal of driver amplifier.
The operating current is chosen by a resistor connected
between this terminal and ground.
RF signal output terminal of driver amplifier.
Please use choke coil for power supply of driver amplifier at
this terminal.
Ground terminal.
RF input terminal 2 of SW.
Control terminal 2 of RF signal. Please see the truth table.
Control terminal 1 of RF signal. Please see the truth table.
RF input terminal 1 of SW.
Ground terminal.
Ground terminal.
9
10
11
12
13
14
15
16
RF
out
GND
P2
V
CTL2
V
CTL1
P1
GND
GND
Notice: PC terminal at pin 1 should be connected to the GND
through high resistance for pull-down (Max 560KΩ).
nTRUTH
TABLE
V
CTL1
0V
2.7V
V
CTL2
2.7V
0V
P1-PC
ON
OFF
P2-PC
OFF
ON
-3-
NJG1312PC1
nTYPICAL
CHARACTERISTICS
FREQUENCY
CHARACTERISTIC
FREQUENCY
CHARACTERISTICS
(V =2.9V, V
DD
CTR
FREQUENCY
CHARACTERISTIC
FREQUENCY
CHARACTERISTICS
(V =2.9V, V
DD
CTR
=2.7V, RF SW ON)
0
10
=2.7V, RF SW OFF)
-10
20
S21
10
S11,S21,S22 (dB)
-10
S11,S21,S22 (dB)
0
S11
-10
S21
-20
S22
-20
-30
S12 (dB)
In Band Spurios (dBc) Pout =5.6dBm
S12 (dB)
0
S11
-10
S22
-20
S12
-20
-40
-30
-30
S12
-40
-50
-40
-60
-30
0.5
-50
1
1.5
2
Frequency (GHz)
2.5
3
-50
0.5
-70
1
1.5
2
Frequency (GHz)
2.5
3
I
DD
, I
CTR
vs. TEMPERATURE
Pin vs. Pout, I
20
15
Pout
10
Pout (dBm)
5
0
-5
-10
I
DD
-15
-20
-15
-10
-5
Pin (dBm)
0
5
10
10
P-1dB 9.73dBm
35
DD
(V
DD
=2.9V, V
CTR
=2.7V, f=900MHz, P
out
=5.6dBm)
30
6
(V
DD
=2.9V, V
CTR
=2.7V, f=900MHz)
45
25
5
40
20
4
I
DD
(mA)
20
5
1
I
25
DD
(mA)
30
15
I
DD
3
10
2
15
0
-50
-25
0
25
50
75
I
CTR
0
100
Gain, G
30
25
cont
,G
flat
vs. TEMPERATURE
0.6
G
cont
0.5
P-1dB, Psat, OIP3 (dBm)
P-1dB, Psat, IN BAND SPURIOUS
vs. TEMPERATURE
(V =2.9V, V
DD
CTR
(V
DD
=2.9V, V
CTR
=2.7V, f=900MHz)
25
=2.7V, f=900MHz)
75
1.98MHz offset
OIP3
20
70
Gain, G
cont
(dB)
20
Gain
15
10
G
flat
0.4
(dB)
15
Psat
10
P-1dB
65
G
flat
0.3
0.2
60
5
0
-50
0.1
0
100
5
0.9MHz offset
55
-25
0
25
50
o
75
0
-50
Ambient Temperature ( C)
-25
0
25
50
75
o
Ambient Temperature ( C)
50
100
-4-
I
CTR
(uA)
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