Datasheet> 器件分类 > 存储> 存储> HB526C264EN-10

文档预览

HB526C264EN-10: 产品描述Synchronous DRAM Module, 2MX64, 7.5ns, CMOS, DIMM-168; 产品类别存储存储; 文件大小593KB，共62页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

下载文档详细参数选型对比全文预览

HB526C264EN-10概述

Synchronous DRAM Module, 2MX64, 7.5ns, CMOS, DIMM-168

HB526C264EN-10规格参数

参数名称	属性值
厂商名称	Hitachi （Renesas ）
零件包装代码	DIMM
包装说明	DIMM, DIMM168
针数	168
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	DUAL BANK PAGE BURST
最长访问时间	7.5 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	100 MHz
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N168
内存密度	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	64
功能数量	1
端口数量	1
端子数量	168
字数	2097152 words
字数代码	2000000
工作模式	SYNCHRONOUS
最高工作温度	65 °C
最低工作温度
组织	2MX64
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM168
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
自我刷新	YES
最大待机电流	0.016 A
最大压摆率	1.2 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

HB526C264EN Series,

HB526C464EN Series

1,048,576-word

64-bit

2-bank Synchronous Dynamic RAM

Module

1,048,576-word

64-bit

4-bank Synchronous Dynamic RAM

Module

ADE-203-629B (Z)

Rev. 2.0

Mar. 17, 1997

Description

The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

have been developed as an optimized main memory solution for 8-byte processor applications. The

HB526C264EN is a 1M

2-bank Synchronous Dynamic RAM Module, mounted 8 pieces of 16-Mbit

SDRAM (HM5216805TT) sealed in TSOP package and 1 piece of serial EEPROM (24C02) for Presence

Detect (PD). The HB526C464EN is a 1M

4-bank Synchronous Dynamic RAM Module, mounted 16

pieces of 16-Mbit SDRAM (HM5216805TT) sealed in TSOP package and 1 piece of serial EEPROM

(24C02) for Presence Detect (PD). An outline of the HB526C264EN, HB526C464EN are 168-pin socket

type package (dual lead out). Therefore, the HB526C264EN, HB526C464EN make high density mounting

possible without surface mount technology. The HB526C264EN, HB526C464EN provide common data

inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.

Features

•

168-pin socket type package (dual lead out)



Outline: 133.35 mm (Length)

25.40 mm (Height)

2.92/4.00 mm (Thickness)



Lead pitch: 1.27 mm

•

3.3V power supply

•

Clock frequency: 100 MHz / 83 MHz

•

JEDEC standard outline unbuffered 8-byte DIMM

•

LVTTL interface

•

Data bus width:

64 (Non parity) bit

•

2 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length: 1/2/4/8/full page

HB526C264EN-10相似产品对比

	HB526C264EN-10	HB526C464EN-12	HB526C264EN-12	HB526C464EN-10
描述	Synchronous DRAM Module, 2MX64, 7.5ns, CMOS, DIMM-168	Synchronous DRAM Module, 4MX64, 9ns, CMOS, DIMM-168	Synchronous DRAM Module, 2MX64, 9ns, CMOS, DIMM-168	Synchronous DRAM Module, 4MX64, 7.5ns, CMOS, DIMM-168
厂商名称	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
零件包装代码	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
针数	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	DUAL BANK PAGE BURST	FOUR BANK PAGE BURST	DUAL BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	7.5 ns	9 ns	9 ns	7.5 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	100 MHz	83 MHz	83 MHz	100 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	134217728 bit	268435456 bit	134217728 bit	268435456 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	64	64	64	64
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	168	168	168	168
字数	2097152 words	4194304 words	2097152 words	4194304 words
字数代码	2000000	4000000	2000000	4000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	65 °C	65 °C	65 °C	65 °C
组织	2MX64	4MX64	2MX64	4MX64
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM168	DIMM168	DIMM168	DIMM168
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096
自我刷新	YES	YES	YES	YES
最大待机电流	0.016 A	0.032 A	0.016 A	0.032 A
最大压摆率	1.2 mA	1.24 mA	1 mA	1.48 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL

HB526C264EN-10

HB526C264EN-10概述

HB526C264EN-10规格参数

文档预览

HB526C264EN-10相似产品对比

推荐资源