12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 参数名称 | 属性值 |
| 厂商名称 | Rochester Electronics |
| Reach Compliance Code | unknown |
| 雪崩能效等级(Eas) | 500 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 12 A |
| 最大漏源导通电阻 | 0.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 48 A |
| 认证状态 | COMMERCIAL |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |

| IRF9530 | RF1S9530SM | IRF9532 | IRF9533 | IRF9531 | |
|---|---|---|---|---|---|
| 描述 | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263A, 3 PIN | 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 10A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12A, 80V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown |
| 雪崩能效等级(Eas) | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 80 V | 80 V |
| 最大漏极电流 (ID) | 12 A | 12 A | 10 A | 10 A | 12 A |
| 最大漏源导通电阻 | 0.3 Ω | 0.3 Ω | 0.4 Ω | 0.4 Ω | 0.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-263AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 2 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 48 A | 48 A | 40 A | 40 A | 48 A |
| 认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 表面贴装 | NO | YES | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Rochester Electronics | - | Rochester Electronics | Rochester Electronics | Rochester Electronics |
| Base Number Matches | 1 | 1 | 1 | 1 | - |
| 是否无铅 | - | - | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | - | - | 不符合 | 不符合 | 不符合 |
| JESD-609代码 | - | - | e0 | e0 | e0 |
| 湿度敏感等级 | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 峰值回流温度(摄氏度) | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 端子面层 | - | - | TIN LEAD | TIN LEAD | TIN LEAD |
| 处于峰值回流温度下的最长时间 | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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