DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3G to NNCD7.5G, NNCD27G
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE : COMMON ANODE)
5 PIN MINI MOLD
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 KV, thus making itself most suitable for
external interface circuit protection.
With four elements mounted in the 5 PIN Mini Mold Package, the
product can cope with high density and automatic packaging.
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
0.32
+0.1
–0.06
1.5
0.65
+0.1
–0.15
1.9
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 KV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (11 product name lined up).
• With 4 elements mounted (common anode) mounted in the 5 PIN
automatic packaging.
MINI MOLD package, the product can achieve a high density and
2.9 ± 0.2
0.95
1
5
0.95
2
3
4
1.1 to 1.4
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
(5 PIN mini MOLD)
MAXIMUM RATINGS (T
A
= 25 ˚C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW
85 W (t = 10
µ
s 1 pulse)
150 ˚C
–55 ˚C to +150 ˚C
(Total)
Fig. 5
5
(SC-74A)
PIN CONNECTION
4
1
2
3
4
5
1
2
3
:
:
:
:
:
K1
A
K2
K3
K4
Cathode 1
Anode (common)
Cathode 2
Cathode 3
Cathode 4
Document No. D11645EJ1V1DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
0 to 0.1
APPLICATIONS
0.8
©
0.16
+0.1
–0.06
1995
1996
NNCD3.3G to NNCD7.5G, NNCD27G
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C) (A-K1, A-K2, A-K3, A-K4)
Dynamic**
Impedance
Z
z
(Ω)
MAX.
130
130
130
130
130
130
80
50
30
30
70
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
2
Reverse
Leakage
IR (
µ
A)
MAX.
20
10
10
10
10
5
5
2
2
2
2
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
21
Breakdown Voltage*
Parameter
V
BR
(V)
Capacitance
Ct (pF)
Test
Condition
E.S.D Voltage
(KV)
Test
Condition
MIN.
NNCD3.3G
NNCD3.6G
NNCD3.9G
NNCD4.3G
NNCD4.7G
NNCD5.1G
NNCD5.6G
NNCD6.2G
NNCD6.8G
NNCD7.5G
NNCD27G
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
25.10
MAX.
3.50
3.80
4.10
4.48
4.90
5.37
5.92
6.53
7.14
7.84
28.90
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
2
TYP.
220
210
200
180
170
160
140
120
110
90
25
MIN.
30
30
30
30
30
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
V
R
= 0 V
f = 1 MHz
30
30
30
30
30
30
*
**
Tested with pulse (40 ms)
Z
z
is measured at I
T
give a small A.C. signal.
2
NNCD3.3G to NNCD7.5G, NNCD27G
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
Fig. 1 P - T
A
RATING
250
NNCD6.8G
100 m
P - Power Dissipation - mW
Fig. 2 I
t
- V
BR
CHARACTERISTICS
(A-K1, A-K2, A-K3, A-K4)
NNCD7.5G
200
10 m
150
I
T
- On state Current - A
NNCD3.3G
NNCD3.6G
1m
NNCD3.9G
100
µ
10
µ
1
µ
100 n
NNCD4.3G
10 n
NNCD4.7G
NNCD6.2G
NNCD5.1G
NNCD5.6G
1
2
3
4
5
6
7
8
9
10
100
50
0
25
50
75
100
125
150
T
A
- Ambient Temperature - ˚C
1n
0
V
BR
- Breakdown Voltage - V
Fig. 3 Z
T
- I
T
CHARACTERISTICS
1 000
TYP.
NNCD3.9G
100
NNCD5.6G
Z
z
-
Ω
NNCD4.7G
NNCD5.1G
10
NNCD7.5G
1
0.1
1
10
100
I
T
- On state Current - A
3
NNCD3.3G to NNCD7.5G, NNCD27G
Fig. 4 TRANSIENT THERMAL IMPEDANCE
1 000
625 ˚C/W
Z
th
- Transient Thermal Impedance - (˚C/W)
100
NNCD [ ] G
10
1
0.1
1m
10 m
100 m
1
t - Time - Sec
10
100
Fig. 5 SURGE REVERSE POWER RATING
10 000
T
A
= 25 ˚C
Non-Repetive
P
RSM
P
RSM
- Surge Reverse Power - W
t
T
1 000
100
NNCD [ ] G
10
1
1
µ
10
µ
100
µ
1m
10 m
100 m
t
T
- Pulse Width - Sec
4
NNCD3.3G to NNCD7.5G, NNCD27G
Sample Application Circuits
*
Set
Conecter
Micro
com.
PC
(CD ROM)
Di
Palallel
Interface
Di
Imterface Cable
*
Set
Printer, P.D.C, T.V Game etc
5
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