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EBD11UD8ADFB-5C: 产品描述1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks); 产品类别存储存储; 文件大小182KB，共19页; 制造商ELPIDA; 官网地址http://www.elpida.com/en

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EBD11UD8ADFB-5C概述

1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks)

EBD11UD8ADFB-5C规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	ELPIDA
零件包装代码	DIMM
包装说明	DIMM, DIMM184
针数	184
Reach Compliance Code	unknow
ECCN代码	EAR99
访问模式	DUAL BANK PAGE BURST
最长访问时间	0.7 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	200 MHz
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N184
JESD-609代码	e0
内存密度	8589934592 bi
内存集成电路类型	DDR DRAM MODULE
内存宽度	64
功能数量	1
端口数量	1
端子数量	184
字数	134217728 words
字数代码	128000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128MX64
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM184
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	235
电源	2.6 V
认证状态	Not Qualified
刷新周期	8192
自我刷新	YES
最大待机电流	0.048 A
最大压摆率	5.28 mA
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.5 V
标称供电电压 (Vsup)	2.6 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED

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DATA SHEET

1GB Unbuffered DDR SDRAM DIMM

EBD11UD8ADFB-5 (128M words

64 bits, 2 Ranks)

Description

The EBD11UD8ADFB is 128M words

64 bits, 2 ranks

Double Data Rate (DDR) SDRAM unbuffered module,

mounting 16 pieces of 512M bits DDR SDRAM sealed

in TSOP package. Read and write operations are

performed at the cross points of the CK and the /CK.

This high-speed data transfer is realized by the 2 bits

prefetch-pipelined architecture. Data strobe (DQS)

both for read and write are available for high speed and

reliable data bus design. By setting extended mode

set enable or disable. This module provides high

density mounting without utilizing surface mount

technology.

Decoupling capacitors are mounted

beside each TSOP on the module board.

Features

•

184-pin socket type dual in line memory module

(DIMM)



PCB height: 31.75mm



Lead pitch: 1.27mm

•

2.6V power supply

•

Data rate: 400Mbps (max.)

•

2.5 V (SSTL_2 compatible) I/O

•

Double Data Rate architecture; two data transfers per

clock cycle

•

Bi-directional, data strobe (DQS) is transmitted

/received with data, to be used in capturing data at

the receiver

•

Data inputs and outputs are synchronized with DQS

•

4 internal banks for concurrent operation

(Component)

•

DQS is edge aligned with data for READs; center

aligned with data for WRITEs

•

Differential clock inputs (CK and /CK)

•

DLL aligns DQ and DQS transitions with CK

transitions

•

Commands entered on each positive CK edge; data

referenced to both edges of DQS

•

Auto precharge option for each burst access

•

Programmable burst length: 2, 4, 8

•

Programmable /CAS latency (CL): 3

•

Programmable output driver strength: normal/weak

•

Refresh cycles: (8192 refresh cycles /64ms)



7.8µs maximum average periodic refresh interval

•

2 variations of refresh



Auto refresh



Self refresh

Document No. E0403E30 (Ver. 3.0)

Date Published February 2004 (K) Japan

URL: http://www.elpida.com

Elpida

Memory , Inc. 2003-2004

EBD11UD8ADFB-5C相似产品对比

	EBD11UD8ADFB-5C	EBD11UD8ADFB-5	EBD11UD8ADFB-5B
描述	1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks)	1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks)	1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks)
是否Rohs认证	不符合	-	不符合
厂商名称	ELPIDA	-	ELPIDA
零件包装代码	DIMM	-	DIMM
包装说明	DIMM, DIMM184	-	DIMM, DIMM184
针数	184	-	184
Reach Compliance Code	unknow	-	unknow
ECCN代码	EAR99	-	EAR99
访问模式	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST
最长访问时间	0.7 ns	-	0.7 ns
其他特性	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	200 MHz	-	200 MHz
I/O 类型	COMMON	-	COMMON
JESD-30 代码	R-XDMA-N184	-	R-XDMA-N184
JESD-609代码	e0	-	e0
内存密度	8589934592 bi	-	8589934592 bi
内存集成电路类型	DDR DRAM MODULE	-	DDR DRAM MODULE
内存宽度	64	-	64
功能数量	1	-	1
端口数量	1	-	1
端子数量	184	-	184
字数	134217728 words	-	134217728 words
字数代码	128000000	-	128000000
工作模式	SYNCHRONOUS	-	SYNCHRONOUS
最高工作温度	70 °C	-	70 °C
组织	128MX64	-	128MX64
输出特性	3-STATE	-	3-STATE
封装主体材料	UNSPECIFIED	-	UNSPECIFIED
封装代码	DIMM	-	DIMM
封装等效代码	DIMM184	-	DIMM184
封装形状	RECTANGULAR	-	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	235	-	235
电源	2.6 V	-	2.6 V
认证状态	Not Qualified	-	Not Qualified
刷新周期	8192	-	8192
自我刷新	YES	-	YES
最大待机电流	0.048 A	-	0.048 A
最大压摆率	5.28 mA	-	5.28 mA
最大供电电压 (Vsup)	2.7 V	-	2.7 V
最小供电电压 (Vsup)	2.5 V	-	2.5 V
标称供电电压 (Vsup)	2.6 V	-	2.6 V
表面贴装	NO	-	NO
技术	CMOS	-	CMOS
温度等级	COMMERCIAL	-	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	-	NO LEAD
端子节距	1.27 mm	-	1.27 mm
端子位置	DUAL	-	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	NOT SPECIFIED

EBD11UD8ADFB-5C

EBD11UD8ADFB-5C概述

EBD11UD8ADFB-5C规格参数

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