DSSK 28-01AS
Power Schottky Rectifier
with common cathode
I
FAV
= 15 A
V
RRM
= 100 V
V
F
= 0.64 V
V
RSM
V
100
V
RRM
V
100
Type
A
C
A
TO-263 AB
A
C (TAB)
A
DSSK 28-01AS
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FRMS
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
F
C
Weight
Conditions
T
C
= 160°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sinev
I
AS
= 10 A; L = 100 µH; T
VJ
= 25°C; non repetitive
V
A
=1.5 • V
RRM
typ.; f=10 kHz; repetitive
Maximum Ratings
35
2x15
230
5
1
5000
-55...+175
175
-55...+150
A
A
A
mJ
A
V/μs
°C
°C
°C
W
N
g
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
T
C
= 25°C
mounting force
typical
105
20...60
2
Symbol
I
R
V
F
Conditions
V
R
= V
RRM
; T
VJ
= 25°C
V
R
= V
RRM
; T
VJ
= 125°C
I
F
= 15 A;
I
F
= 15 A;
I
F
= 30 A;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
typ.
max.
0.5
5
0.64
0.82
0.78
1.4
mA
mA
V
V
V
K/W
Dimensions see Outlines.pdf
R
thJC
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, conditions and dimensions.
20080612a
© 2008 IXYS All rights reserved
1-2
DSSK 28-01AS
30
A
I
F
I
R
10
100
mA
10
T =175°C
VJ
1
150°C
125°C
1000
pF
C
T
0.1
100°C
T
VJ
=
175°C
150°C
125°C
25°C
75°C
0.01
50°C
0.001
25°C
100
0.0001
80
0
20
40
60
80
V
R
100 V
0
20
40
60
T
VJ
= 25°C
1
0
0.0
0.2
0.4
0.6
V
F
0.8 V 1.0
80 V 100
V
R
Fig. 1 Max. forward voltage
drop characteristics
40
A
30
I
F(AV)
20
10
10
d = 0.5
DC
25
W
20
P
(AV)
15
Fig. 2 Typ. reverse current I
R
vs. reverse voltage V
R
10000
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
A
I
FSM
d=
DC
0.5
0.33
0.25
0.17
0.08
1000
5
0
0
50
100
T
C
150 C 200
0
0
5
10
15
20 25
I
F(AV)
30
A
100
10
100
1000 µs 10000
t
P
Fig. 4 Avg. forward current I
F(AV)
vs. case temperature T
C
10
K/W
Fig. 5 Forward power loss characteristics
1
Z
thJC
D = 0.5
0.33
0.25
0.17
0.08
0.1
Single Pulse
0.01
0.0001
DSSK 28-01A
Note: All curves are per diode
0.001
0.01
0.1
t
s
1
Fig. 6 Transient thermal impedance junction to case at various duty cycles
20080612a
© 2008 IXYS All rights reserved
2-2
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
