NTMS5835NL
Power MOSFET
40 V, 12 A, 10 mW
Features
•
•
•
•
Low R
DS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Pulsed Drain
Current
T
A
= 25°C
Steady
State
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
t
≤10
s
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
t
p
= 10
ms
I
DM
T
J
, T
STG
I
S
EAS
IAS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
9.2
7.4
1.5
1.0
12
9.6
2.6
1.6
48
−55
to
+150
20
69
37
260
A
°C
A
mJ
A
°C
W
A
W
Unit
V
V
A
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V
(BR)DSS
40 V
R
DS(ON)
MAX
10 mW @ 10 V
14 mW @ 4.5 V
D
I
D
MAX
12 A
G
S
N−CHANNEL MOSFET
8
1
SO−8
CASE 751
STYLE 12
A
Y
WW
G
MARKING DIAGRAM/
PIN ASSIGNMENT
Source
Source
Source
Gate
1
5835NL
AYWWG
G
8
Drain
Drain
Drain
Drain
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 40 V, V
GS
= 10 V,
L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Top View
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient
−
t
≤10
s (Note 1)
Junction−to−Foot (Drain) (Note 1)
Junction−to−Ambient Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJF
R
qJA
Value
82
49
21
121
°C/W
Unit
ORDERING INFORMATION
Device
NTMS5835NLR2G
Package
Shipping
†
SO−8
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
2
) pad size.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 1
1
Publication Order Number:
NTMS5835NL/D
NTMS5835NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 10 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 10 A
V
GS
= 10 V, V
DS
= 20 V; I
D
= 10 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
Forward Transconductance
V
DS
= 15 V, I
D
= 10 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2115
315
220
40
20
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.9
0.785
26
13
13
17
nC
ns
1.2
V
15
45
22
9.0
ns
2.0
7.0
9.5
3.3
1.2
V
W
50
23
nC
pF
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
16
1
100
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.0
1.85
7.0
8.2
10.3
10
3.0
V
mV/°C
10
14
mW
S
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMS5835NL
TYPICAL PERFORMANCE CURVES
80
80
T
J
= 25°C
I
D,
DRAIN CURRENT (A)
4V
70
60
50
40
30
20
10
5
0
2
T
J
= 125°C
T
J
= 25°C
V
DS
≥
5 V
10 V
4.5 V
5.5 V
6.5 V
8.5 V
I
D,
DRAIN CURRENT (A)
60
40
3.6 V
3.4 V
20
3V
0
0
1
2
3
4
T
J
=
−55°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2.5
3
3.5
4
4.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.02
T
J
= 25°C
0.025
T
J
= 25°C
I
D
= 10 A
0.015
V
GS
= 4.5 V
V
GS
= 10 V
0.015
0.01
0.005
3
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1
0.8
0.6
V
GS
= 4.5 V
I
D
= 10 A
I
DSS
, LEAKAGE (nA)
100000
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
0.005
2
6
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10
14
I
D,
DRAIN CURRENT (A)
18
V
GS
= 0 V
T
J
= 150°C
10000
T
J
= 125°C
50
25
0
25
50
75
100
125
150
1000
10
20
30
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMS5835NL
TYPICAL PERFORMANCE CURVES
3000
2500
C, CAPACITANCE (pF)
C
iss
2000
1500
1000
500
0
C
oss
C
rss
0
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
I
D
= 10 A
T
J
= 25°C
35
Q
GS
Q
GD
V
GS
V
DS
, DRAIN−TO−SOURCE (V)
40
1
150
9
V
GS
, GATE−TO−SOURCE (V)
Q
T
T
J
= 25°C
V
GS
= 0 V
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 20 V
I
D
= 10 A
V
GS
= 4.5 V
t, TIME (ns)
t
r
100
24
20
16
12
8
4
0
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
t
f
10
t
d(off)
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.6
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
10
1
0.1
0.01
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
dc
100
ms
1 ms
10 ms
10
ms
75
Figure 10. Diode Forward Voltage vs. Current
I
D
= 37 A
I
D
, DRAIN CURRENT (A)
50
25
0.001
0.01
100
0
25
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMS5835NL
TYPICAL PERFORMANCE CURVES
100
D = 0.5
0.2
0.1
0.05
0.02
10
R(t) (°C/W)
1
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
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