b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
1
Si1035X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 2.8 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 200 mA
V
GS
= - 4.5 V, I
D
= - 150 mA
V
GS
= 2.5 V, I
D
= 175 mA
Drain-Source On-State
Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= 125 mA
V
GS
= 1.8 V, I
D
= 150 mA
V
GS
= - 1.8 V, I
D
= - 100 mA
V
DS
= 1.5 V, I
D
= 40 mA
V
DS
= - 1.5 V, I
D
= - 30 mA
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 150 mA
N-Channel
V
DD
= 10 V, R
L
= 47
I
D
250 mA, V
GEN
= 4.5 V, R
g
= 10
P-Channel
V
DD
= - 10 V, R
L
= 65
I
D
- 150 mA, V
GEN
= - 4.5 V, R
g
= 10
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 150 mA
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
750
1500
75
150
225
450
75
80
ns
75
90
Turn-Off Time
t
OFF
pC
g
fs
V
SD
V
DS
= 10 V, I
D
= 200 mA
V
DS
= - 10 V, I
D
= - 150 mA
I
S
= 150 mA, V
GS
= 0 V
I
S
= - 150 mA, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.5
0.4
1.2
- 1.2
250
- 200
5
8
7
12
9
15
10
20
S
V
0.40
- 0.40
± 0.5
± 0.5
± 1.5
± 1.0
1
-1
± 1.0
± 1.0
± 3.0
± 3.0
500
- 500
10
- 10
nA
µA
mA
µA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Turn-On Time
t
ON
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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