74LX1G02
SINGLE 2-INPUT NOR GATE
s
s
s
s
s
s
s
s
5V TOLERANT INPUTS
HIGH SPEED: t
PD
= 4.2ns (MAX.) at V
CC
= 3V
LOW POWER DISSIPATION:
I
CC
= 1µA (MAX.) at T
A
= 25°C
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN) at V
CC
= 3V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
PIN CONNECTION AND IEC LOGIC SYMBOLS
DESCRIPTION
The 74LX1G02 is a low voltage CMOS SINGLE
2-INPUT NOR GATE fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
b
O
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge.
so
te
le
ro
P
uc
d
SOT323-5L
s)
t(
P
te
le
od
r
74LX1G02STR
74LX1G02CTR
s)
t(
uc
T&R
April 2004
1/10
74LX1G02
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1
2
4
3
5
SYMBOL
1A
1B
1Y
GND
V
CC
NAME AND FUNCTION
TRUTH TABLE
A
L
L
H
H
te
le
od
o
r
s
P
b
O
te
le
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
B
Data Input
Data Input
Data Output
Ground (0V)
L
H
L
H
Positive Supply Voltage
ro
P
uc
d
s)
t(
Y
H
L
L
L
s)
t(
uc
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
O
Parameter
Value
Unit
V
V
V
V
mA
mA
mA
mA
°C
°C
Supply Voltage
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
DC Input Voltage
DC Output Voltage (V
CC
= 0V)
DC Input Diode Current
DC Output Current
DC Output Voltage (High or Low State) (note 1)
DC Output Diode Current (note 2)
-0.5 to V
CC
+ 0.5
- 50
- 50
±
50
I
OK
I
CC
or I
GND
DC V
CC
or Ground Current per Supply Pin
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
±
50
300
-65 to +150
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
O
absolute maximum rating must be observed
2) V
O
< GND, V
O
> V
CC
2/10
74LX1G02
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
T
op
dt/dv
Supply Voltage (note 1)
Input Voltage
Output Voltage (V
CC
= 0V)
Output Voltage (High or Low State)
High or Low Level Output Current (V
CC
= 4.5 to 5.5V)
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
High or Low Level Output Current (V
CC
= 2.7 to 3.0V)
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
High or Low Level Output Current (V
CC
= 1.65 to 2.3V)
Operating Temperature
Input Rise and Fall Time (note 2)
Parameter
Value
1.65 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
±
32
±
24
±
12
±
8
±
4
-40 to 85
Unit
V
V
V
V
mA
mA
mA
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2V at V
CC
= 3.0V
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
1.65 to 1.95
2.3 to 2.7
3.0 to 5.5
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
V
IL
Low Level Input
Voltage
1.65 to 1.95
2.3 to 2.7
3.0 to 5.5
1.65
2.3
3.0
V
OH
High Level Output
Voltage
1.65 to 4.5
I
O
=-100
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=-16 mA
I
O
=-24 mA
I
O
=-32 mA
I
O
=100
µA
I
O
=4 mA
I
O
=8 mA
4.5
V
OL
Low Level Output
Voltage
1.65 to 4.5
1.65
2.3
3.0
4.5
I
O
=16 mA
I
O
=24 mA
I
O
=32 mA
I
I
I
off
I
CC
Input Leakage
Current
Power Off Leakage
Current
Quiescent Supply
Current
1.65 to 5.5
0
1.65 to 5.5
V
I
= 0 to 5.5V
V
I
or V
O
= 5.5V
V
I
= V
CC
or GND
V
IH
High Level Input
Voltage
b
O
so
te
le
r
P
du
o
0 to 10
Min.
ct
s)
(
mA
mA
°C
ns/V
Value
-40 to 85 °C
Min.
0.75V
CC
0.7V
CC
0.7V
CC
P
te
le
Max.
0.25V
CC
0.3V
CC
0.3V
CC
od
r
0.7V
CC
0.7V
CC
s)
t(
uc
Unit
Max.
V
0.25V
CC
0.3V
CC
0.3V
CC
V
-55 to 125 °C
0.75V
CC
V
CC
-0.1
1.2
1.9
2.4
2.2
3.8
0.1
0.45
0.3
0.4
0.55
0.55
±
10
10
10
V
CC
-0.1
1.2
1.9
2.4
2.2
3.8
0.1
0.45
0.3
0.4
0.55
0.55
±
10
10
10
µA
µA
µA
V
V
3/10
74LX1G02
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
C
L
(pF)
R
L
(Ω)
t
s
=
t
r
(ns)
-40 to 85 °C
Min.
2
2
1
1
2
2
1
1
1
Max.
12.0
7.0
4.7
4.1
7.5
5.5
5.2
4.2
3.7
Value
-55 to 125 °C
Min.
2
2
1
1
2
2
1
1
1
Max.
12.0
7.0
4.7
4.1
7.5
5.5
5.2
4.2
3.7
Unit
t
PLH
t
PHL
Propagation Delay
Time
15
1MΩ
3.0
30
30
50
50
50
1000
500
500
500
500
2.0
2.0
2.5
2.5
2.5
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
0
1.8
2.5
3.3
C
IN
C
PD
Input Capacitance
Power Dissipation Capacitance
(note 1)
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
b
O
f
IN
= 10MHz
so
te
le
ro
P
Min.
uc
d
4
21
24
26
s)
t(
Unit
Value
T
A
= 25 °C
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
te
le
r
P
od
Typ.
s)
t(
uc
Max.
pF
pF
4/10
74LX1G02
TEST CIRCUIT
R
T
= Z
OUT
of pulse generator (typically 50Ω)
TEST CIRCUIT AND WAVEFORM SYMBOL VALUE
Symbol
1.65 to 1.95V
C
L
R
L
V
IH
V
M
15pF/30pF
1MΩ/1000Ω
V
CC
V
CC
/2
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
t
r
= t
r
<2.0ns
b
O
so
V
CC
2.3 to 2.7V
15pF/30pF
V
CC
1MΩ/500Ω
V
CC
/2
te
le
ro
P
uc
d
s)
t(
P
te
le
od
r
s)
t(
uc
15pF/50pF
1MΩ/500Ω
V
CC
V
CC
/2
<2.5ns
2.7 to 5.5V
<2.0ns
WAVEFORM: PROPAGATION DELAY
(f=1MHz; 50% duty cycle)
5/10
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
