SUP/SUB75N06-08
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.008
I
D
(A)
75
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N06-08
D S
S
N-Channel MOSFET
Top View
SUB75N06-08
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 125_C
I
D
I
DM
I
AR
E
AR
Symbol
V
GS
Limit
"20
75
a
55
240
60
280
250
c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
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Document Number: 70283
S-05111—Rev. F, 10-Dec-01
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Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
C/W
2-1
SUP/SUB75N06-08
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V
,
V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.007
0.008
0.012
0.016
S
W
60
V
2.0
3.0
4.0
"100
1
50
150
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.47
W
I
D
^
75 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V
,
V
GS
= 10 V, I
D
= 75 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4800
910
270
85
28
26
20
95
65
20
40
200
120
60
ns
120
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 75 A, di/dt = 100 A/ms
m
I
F
= 75 A , V
GS
= 0 V
1.0
67
6
0.2
75
A
240
1.3
120
8
0.48
V
ns
A
mC
Notes
a. Pulse test: pulse width
v
300
msec,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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FaxBack 408-970-5600
2-2
Document Number: 70283
S-05111—Rev. F, 10-Dec-01
SUP/SUB75N06-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10, 9, 8 V
200
6V
I
D
– Drain Current (A)
150
I
D
– Drain Current (A)
150
7V
200
Transfer Characteristics
100
100
5V
50
4V
0
0
2
4
6
8
10
50
T
C
= 125_C
25_C
–55_C
0
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
120
T
C
= –55_C
25_C
r
DS(on)
– On-Resistance (
Ω
)
0.008
0.010
On-Resistance vs. Drain Current
100
g
fs
– Transconductance (S)
V
GS
= 10 V
80
125_C
0.006
V
GS
= 20 V
60
0.004
40
20
0.002
0
0
20
40
60
80
100
0.000
0
20
40
60
80
100
120
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
7000
6000
C – Capacitance (pF)
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
C
rss
C
oss
C
iss
20
Gate Charge
V
GS
– Gate-to-Source Voltage (V)
16
V
DS
= 30 V
I
D
= 75 A
12
8
4
0
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70283
S-05111—Rev. F, 10-Dec-01
www.vishay.com
2-3
SUP/SUB75N06-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
2.0
I
S
– Source Current (A)
T
J
= 150_C
T
J
= 25_C
10
100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
500
Safe Operating Area
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
60
Limited
by r
DS(on)
10
ms
100 as
40
1 ms
10
T
C
= 25_C
Single Pulse
20
10 ms
100 ms
dc
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
1
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
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S
FaxBack 408-970-5600
Document Number: 70283
S-05111—Rev. F, 10-Dec-01
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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