PD - 97219
IRF6636PbF
IRF6636TRPbF
l
l
l
l
l
l
l
l
l
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
6.1nC
R
DS(on)
Q
gs2
1.9nC
R
DS(on)
Q
oss
10nC
20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V
Q
rr
7.3nC
V
gs(th)
1.8V
18nC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
20
±20
18
15
81
140
28
14
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
ID= 14A
VDS= 16V
VDS= 10V
A
mJ
A
ID = 18A
15
10
5
T J = 25°C
0
0
1
2
3
4
5
6
7
8
9
10
T J = 125°C
30
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
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T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.27mH, R
G
= 25Ω, I
AS
= 14A.
1
05/29/06
IRF6636PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
52
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
15
3.2
4.6
–––
-6.4
–––
–––
–––
–––
–––
18
5.9
1.9
6.1
4.1
8.0
10
–––
14
19
16
6.2
2420
780
360
–––
–––
–––
1.5
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
–––
–––
4.5
6.4
2.45
–––
1.0
150
100
-100
–––
27
–––
–––
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 18A
i
V
GS
= 4.5V, I
D
= 14A
i
V
mV/°C
µA
nA
S
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 14A
V
DS
= 10V
nC
V
GS
= 4.5V
I
D
= 14A
See Fig. 15
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 14A
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
i
V
DS
= V
GS
, I
D
= 250µA
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
16
7.3
140
1.0
24
11
V
ns
nC
Min.
–––
Typ. Max. Units
–––
52
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 14A
di/dt = 100A/µs
i
See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6636PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
em
km
lm
fm
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
eÃ
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
1
τ
2
τ
3
τ
4
τ
5
τ
5
τ
A
1
Ri (°C/W)
0.6677
1.0463
1.5612
29.2822
τi
(sec)
0.000066
0.000896
0.004386
0.686180
0.1
0.01
Ci=
τi/Ri
SINGLE PULSE
Ci i/Ri
( THERMAL RESPONSE )
25.4550 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6636PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
1000
0.1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 10V
≤
60µs PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
Fig 5.
Typical Output Characteristics
1.5
ID = 18A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current
(Α)
1.0
1
V GS = 10V
V GS = 4.5V
0.5
0.1
1
2
3
4
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 7.
Normalized On-Resistance vs. Temperature
50
T J = 25°C
40
Typical RDS(on) ( mΩ)
C, Capacitance(pF)
10000
30
Ciss
1000
Coss
Crss
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
20
10
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
20
40
60
80
100
120
140
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6636PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1msec
10msec
10
1
T J = 150°C
T J = 25°C
T J = -40°C
1
0.1
T A = 25°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
0.01
T J = 150°C
Single Pulse
0.01
0.10
1.00
10.00
100.00
Fig 10.
Typical Source-Drain Diode Forward Voltage
90
VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50µA
VDS, Drain-to-Source Voltage (V)
80
70
ID, Drain Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
120
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Threshold Voltage vs. Temperature
100
80
60
40
20
0
25
50
75
ID
TOP
6.4A
9.8A
BOTTOM 14A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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5
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