NTHD3100C
Power MOSFET
20 V, +3.9 A /−4.4 A,
Complementary ChipFETt
Features
AND PIN A
•
•
•
•
•
•
•
•
•
•
Complementary N−Channel and P−Channel MOSFET
Small Size, 40% Smaller than TSOP−6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Trench P−Channel for Low On Resistance
Low Gate Charge N−Channel for Test Switching
Pb−Free Packages are Available
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V
(BR)DSS
N−Channel
20 V
P−Channel
−20
V
R
DS(on)
Typ
58 mW @ 4.5 V
77 mW @ 2.5 V
64 mW @
−4.5
V
85 mW @
−2.5
V
S2
I
D
MAX
3.9 A
−4.4
A
Applications
DC−DC Conversion Circuits
Load Switch Applications Requiring Level Shift
Drive Small Brushless DC Motors
Ideal for Power Management Applications in Portable, Battery
Powered Products
D1
G1
S1
G2
D2
P−Channel MOSFET
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Ch
P−Ch
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t
≤
10 s
Steady
State
t
≤
10 s
Steady
State
t
≤
5s
Pulsed Drain Current
(Note 1)
N−Ch
P−Ch
t = 10
ms
t = 10
ms
T
J
,
T
STG
I
S
T
L
I
DM
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
P
D
T
A
= 25°C
3.1
12
−13
−55
to
150
2.5
260
°C
A
°C
A
I
D
I
D
Symbol
V
DSS
V
GS
Value
20
"12
"8.0
2.9
2.1
3.9
−3.2
−2.3
−4.4
1.1
W
D
1
D
1
D
2
D
2
8
7
6
5
Unit
V
V
N−Channel MOSFET
8
A
1
ChipFET
CASE 1206A
STYLE 2
A
PIN
CONNECTIONS
1
2
3
4
MARKING
DIAGRAM
1
2
3
4
C9 M
G
8
7
6
5
S
1
G
1
S
2
G
2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
C9
M
G
= Specific Device Code
= Month Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 3
1
Publication Order Number:
NTHD3100C/D
NTHD3100C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient
−
Steady State (Note 2)
Junction−to−Ambient
−
t
≤
10 s (Note 2)
Symbol
R
qJA
R
qJA
Max
113
60
Unit
°C/W
°C/W
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
(Note 3)
Drain−to−Source Breakdown Voltage
V
(BR)DSS
I
DSS
N
P
Zero Gate Voltage Drain Current
N
P
N
P
Gate−to−Source Leakage Current
I
GSS
N
P
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
N
P
Drain−to−Source On Resistance
N
P
N
P
Forward Transconductance
g
FS
N
P
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
N
P
Output Capacitance
N
P
Reverse Transfer Capacitance
N
P
Total Gate Charge
N
P
Threshold Gate Charge
N
P
Gate−to−Source Gate Charge
N
P
Gate−to−Drain “Miller” Charge
N
P
3. Pulse Test: pulse width
v
250
ms,
duty cycle
v
2%.
f = 1 MHz, V
GS
= 0 V
V
DS
= 10 V
V
DS
=
−10
V
V
DS
= 10 V
V
DS
=
−10
V
V
DS
= 10 V
V
DS
=
−10
V
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−3.2
A
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−3.2
A
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−3.2
A
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−3.2
A
165
680
80
100
25
70
2.3
7.4
0.2
0.6
0.4
1.4
0.7
2.5
nC
pF
V
GS
= V
DS
I
D
= 250
mA
I
D
=
−250
mA
0.6
−.45
58
64
77
85
6.0
8.0
1.2
−1.5
80
80
115
110
S
mW
V
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
=
−16
V
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
=
−16
V
I
D
= 250
mA
I
D
=
−250
mA
T
J
= 25
°C
T
J
= 125
°C
20
−20
1.0
−1.0
5.0
−5.0
±100
±100
nA
mA
V
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±12
V
V
DS
= 0 V, V
GS
=
±8.0
V
V
GS
= 4.5 V , I
D
= 2.9 A
V
GS
=
−4.5
V , I
D
=
−3.2
A
V
GS
= 2.5 V , I
D
= 2.3 A
V
GS
=
−2.5
V, I
D
=
−2.2
A
V
DS
= 10 V, I
D
= 2.9 A
V
DS
=
−10
V , I
D
=
−3.2
A
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2
NTHD3100C
ELECTRICAL CHARACTERISTICS
(continued)
(T
J
= 25°C unless otherwise noted)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
N
P
Reverse Recovery Time
N
P
Charge Time
N
P
Discharge Time
N
P
Reverse Recovery Charge
N
P
4. Switching characteristics are independent of operating junction temperatures.
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms
I
S
= 2.5 A
I
S
=
−2.5
A
I
S
= 1.5 A
I
S
=
−1.5
A
I
S
= 1.5 A
I
S
=
−1.5
A
I
S
= 1.5 A
I
S
=
−1.5
A
I
S
= 1.5 A
I
S
=
−1.5
A
P
V
GS
=
−4.5
V, V
DD
=
−10
V,
I
D
=
−3.2
A, R
G
= 2.5
W
N
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 2.9 A, R
G
= 2.5
W
6.3
10.7
9.6
1.5
5.8
11.7
16
12.4
ns
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V, T
J
= 25
°C
0.8
−0.8
12.5
13.5
9.0
9.5
3.5
4.0
6.0
6.5
nC
1.15
−1.2
ns
V
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3
NTHD3100C
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
8
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 5 V to 3 V
V
GS
= 2.4 V
6
2.2 V
2V
8
I
D,
DRAIN CURRENT (AMPS)
T
J
= 25°C
V
DS
≥
10 V
6
4
1.8 V
4
2
1.6 V
1.4 V
2
T
C
=
−55°C
25°C
100°C
3
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.15
I
D
= 2.9 A
T
J
= 25°C
0.1
0.1
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 2.5 V
0.07
V
GS
= 4.5 V
0.05
0
0
3
5
2
4
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
6
0.04
1
3
5
7
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.7
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.3
1.1
0.9
0.7
−50
100
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 2.9 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 100°C
10
−25
0
25
50
75
100
125
150
1
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTHD3100C
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
400
C
ISS
C, CAPACITANCE (pF)
300
C
RSS
200
5
4
V
DS
3
2
1
0
Q
GS
Q
GD
V
GS
9
6
3
0
3
15
12
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
Q
G
100
C
OSS
I
D
= 2.9 A
T
J
= 25°C
0
0.5
1
1.5
2
2.5
0
10
5
V
GS
0
V
DS
5
10
15
20
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 10 V
I
D
= 2.9 A
V
GS
= 4.5 V
t, TIME (ns)
5
4
3
2
1
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
10
t
d(off)
t
d(on)
t
r
1
1
t
f
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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