(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
50
100
1.0
2.0
50
−60
to +175
A
I
F(AV)
I
FSM
T
J
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25°C)
Symbol
R
qJL
Max
13
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 2.0 A, T
J
= 25°C)
(i
F
= 2.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
(i
F
= 0.5 A, i
R
= 1.0 A, I
R
to 0.25 A)
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
Symbol
v
F
Value
0.94
0.74
2.0
50
30
20
20
Unit
V
i
R
mA
t
rr
ns
t
fr
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
10
7.0
5.0
3.0
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
2.0
175°C
100°C
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
10
7.0
5.0
3.0
2.0
100°C
1.0
0.7
0.5
T
C
= 25°C
0.3
0.2
175°C
1.0
0.7
0.5
25°C
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.1
0.07
0.05
0.03
0.02
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
I
R
, REVERSE CURRENT (mA)
T
J
= 175°C
10
100
I
R
, REVERSE CURRENT (mA)
Figure 2. Maximum Forward Voltage
T
J
= 175°C
10
T
J
= 100°C
1
T
J
= 25°C
1
T
J
= 100°C
T
J
= 25°C
0.1
0.1
0.01
0
20
40
60
80
100
0.01
0
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
60
80
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 3. Typical Reverse Current*
* The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from these
same curves if applied V
R
is sufficiently below rated V
R
.
Figure 4. Maximum Reverse Current*
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3
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
50
45
C, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
NOTE: TYPICAL
CAPACITANCE AT
0 V = 44 V
50
45
C, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 47 V
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
I
F(AV),
AVERAGE FORWARD CURRENT (AMPS)
P
F,
AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Maximum Capacitance
10
9
8
7
6
5
4
3
2
1
0
80
90
SQUARE WAVE
100 110 120 130 140 150
160 170 180
dc
RATED VOLTAGE APPLIED
R
qJC
= 13°C/W
T
J
= 175°C
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
SQUARE WAVE
T
J
= 175°C
dc
2
2.5
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Current Derating, Case
Figure 8. Power Dissipation
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4
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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