d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
Document Number: 65364
S09-2029-Rev. A, 05-Oct-09
www.vishay.com
1
SiR412DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.77
13
5
7
6
T
C
= 25 °C
20
50
1.2
60
44
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.6
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
600
180
71
10.7
4.9
1.4
1.4
2.7
13
13
13
10
7
10
13
8
5.4
26
26
26
20
14
20
26
15
ns
Ω
16
7.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 10 A
20
0.010
0.0125
33
0.0120
0.0150
1.2
25
26
-5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65364
S09-2029-Rev. A, 05-Oct-09
SiR412DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10
V
thru 4
V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
T
C
= 125 °C
6
10
30
V
GS
= 3
V
20
4
T
C
= 25 °C
2
T
C
= - 55 °C
10
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.016
750
C
iss
600
0.014
C - Capacitance (pF)
450
C
oss
300
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5
V
0.012
V
GS
= 10
V
0.010
150
C
rss
0.008
0
10
20
30
40
50
0
0
5
10
15
20
25
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 10
V
6
V
DS
= 5
V
4
V
DS
= 15
V
1.7
2.0
I
D
= 10 A
Capacitance
V
GS
= 10
V
1.4
V
GS
= 4.5
V
1.1
2
0.8
0
0.0
2.2
4.4
6.6
8.8
11.0
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 65364
S09-2029-Rev. A, 05-Oct-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
SiR412DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
10
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.056
0.070
I
D
= 10 A
0.042
0.1
0.028
T
J
= 125 °C
0.014
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
160
Power (W)
- 0.1
I
D
= 5 mA
120
- 0.4
I
D
= 250
µA
80
- 0.7
40
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0 .0 0 1
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
BVDSS
Limited
10
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65364
S09-2029-Rev. A, 05-Oct-09
SiR412DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
24
I
D
- Drain Current (A)
Package Limited
18
12
6
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating*
20
2.5
16
2.0
Power (W)
12
Power (W)
0
25
50
75
100
125
150
1.5
8
1.0
4
0.5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
stm32/stm8
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