BC856...-BC860...
PNP Silicon AF Transistor
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 hz and 15 kHz
•
Complementary types:
BC846...-BC850... (NPN)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
1
Pb-containing
package may be available upon special request
1
2007-09-25
BC856...-BC860...
Type
BC856A
BC856B
BC856BW
BC857A
BC857B
BC857BF
BC857BL3
BC857BW
BC857C
BC857CW
BC858A
BC858B
BC858BL3
BC858BW
BC858C
BC858CW
BC859B
BC859C
BC860B
BC860BW
BC860CW
Marking
3As
3Bs
3Bs
3Es
3Fs
3Fs
3F
3Fs
3Gs
3Gs
3Js
3Ks
3K
3Ks
3Ls
3Ls
4Bs
4Cs
4Fs
4Fs
4Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
SOT323
SOT23
SOT23
TSFP-3
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT23
SOT323
SOT323
2
2007-09-25
BC856...-BC860...
Maximum Ratings
Parameter
Collector-emitter voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
T
S
≤
71 °C, BC856-BC860
T
S
≤
128 °C, BC857BF-BC858BF
T
S
≤
135 °C, BC857BL3, BC860BL3
T
S
≤
124 °C, BC856W-BC860W
V
EBO
I
C
I
CM
P
tot
V
CBO
Symbol
V
CEO
Value
65
45
30
Unit
V
80
50
30
5
100
200
mW
330
250
250
250
T
j
T
stg
mA
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BC856-BC860
BC857BF-BC858BF
BC857BL3, BC858BL3
BC856W-BC860W
1
For
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
105
°C
Symbol
R
thJS
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
3
2007-09-25
BC856...-BC860...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BC856...
I
C
= 10 mA,
I
B
= 0 , BC857..., BC860...
I
C
= 10 mA,
I
B
= 0 , BC858..., BC859...
Unit
V
65
45
30
V
(BR)CBO
-
-
-
-
-
-
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC856...
I
C
= 10 µA,
I
E
= 0 , BC857..., BC860...
I
C
= 10 µA,
I
E
= 0 , BC858..., BC859...
80
50
30
V
(BR)EBO
I
CBO
-
-
-
-
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
140
250
480
180
290
520
0.015
5
-
-
-
-
250
475
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
125
220
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
75
250
700
850
650
-
300
650
-
-
750
820
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 0.5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse
600
-
test: t < 300µs; D < 2%
4
2007-09-25
BC856...-BC860...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Noise figure
F
h
22e
-
-
-
18
30
60
1
-
-
-
4
dB
h
21e
-
-
-
200
330
600
-
-
-
µS
h
12e
-
-
-
1.5
2
3
-
-
-
-
h
11e
-
-
-
2.7
4.5
8.7
-
-
-
10
-4
kΩ
C
eb
-
8
-
C
cb
-
1.5
-
pF
f
T
-
250
-
MHz
Symbol
min.
Values
typ.
max.
Unit
-
I
C
= 0.2 mA,
V
CE
= 5 V,
f
= 1 kHz,
D
f
= 200
Hz,
R
S
= 2 kΩ, BC859, BC850
Equivalent noise voltage
I
C
= 200 mA,
V
CE
= 5 V,
R
S
= 2 kΩ,
f
= 10...50 Hz, BC860
V
n
-
-
0.11
µV
5
2007-09-25
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
