d. Maximum under Steady State conditions is 95 °C/W.
Document Number: 69513
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
1
Si4668DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.77
22
15
12
10
T
C
= 25 °C
4.5
60
1.1
40
30
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1654
245
106
27.5
12.4
4
3.3
0.6
21
12
73
18
10
11
23
8
1.2
40
24
120
35
20
22
45
16
ns
Ω
42
19
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 15 A
V
GS
=
4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
30
0.0085
0.010
58
0.0105
0.0125
0.8
25
25
- 5.7
2.6
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 69513
S09-0394-Rev. B, 09-Mar-09
Si4668DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
2.0
48
I
D
- Drain Current (A)
1.6
36
V
GS
= 3
V
24
1.2
0.8
T
J
= 25 °C
0.4
12
T
J
= 125 °C
T
J
= - 55 °C
0
0
0.5
1.0
1.5
2.0
2.5
0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.013
2100
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.012
C - Capacitance (pF)
1680
C
iss
0.011
V
GS
= 4.5
V
0.010
1260
840
0.009
V
GS
= 10
V
420
C
oss
C
rss
0
5
10
15
20
25
0.008
0
12
24
36
48
60
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.6
1.8
I
D
= 20 A
Capacitance
1.4
(Normalized)
6
V
DS
= 10
V
V
DS
= 15
V
1.2
4
V
DS
= 20
V
2
1.0
V
GS
= 10
V
0.8
V
GS
= 4.5
V
0
0
5.6
11.2
16.8
22.4
28.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69513
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
3
Si4668DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.05
1
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
0.04
T
J
= 150 °C
0.03
0.1
T
J
= 25 °C
0.02
T
A
= 125 °C
0.01
T
A
= 25 °C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
120
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
96
Power (W)
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250
µA
- 0.7
72
48
24
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
1s
10 s
DC
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69513
S09-0394-Rev. B, 09-Mar-09
Si4668DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
18
14
I
D
- Drain Current (A)
11
7
4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
6.0
1.60
4.8
1.28
Power (W)
Power (W)
3.6
0.96
2.4
0.64
1.2
0.32
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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