Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
) .......33.5°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
SUPPLY VOLTAGE
Input Supply Voltage
Input Supply Current
Internal LDO Output Voltage
V
S
Undervoltage Lockout
V
S
Undervoltage-Lockout
Hysteresis
CSP Undervoltage Lockout
ORING
ORing MOSFET Forward
Regulation Voltage (V
IN_
- V
CSP
)
ORing MOSFET Reverse Bias
Turn-Off Voltage
ORing MOSFET Reverse Bias
Turn-On Voltage
ORing MOSFET Reverse Bias
Hysteresis Voltage
V
FWD_REG
V
REV_OFF
V
REV_ON
V
REV_HYS
V
IN_
- V
CSP
, V
CSP
rising (V
CSP
> V
IN_
),
V
OG_
goes low
V
IN_
- V
CSP
, V
CSP
falling, (V
IN_
> V
CSP_
),
V
OG_
goes to forward regulation
V
REV_OFF
- V
REV_ON
7.5
-25
-20
10
-20
-15
5
12.5
-15
-10
mV
mV
mV
mV
V
IN
I
IN
V
S
V
UVLO
V
UVLO_HYS
V
CSP_UVLO
V
CSP
rising
V
CSP
falling
2.4
2.25
V
S
rising
4.8
2.5
Hot swap and ORing
Current monitor
2.9
4.8
4
5
2.65
0.07
2.49
2.35
2.58
2.42
5.25
2.8
18
18
V
mA
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
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Maxim Integrated
│
2
MAX15068
Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
Electrical Characteristics (continued)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
Turn-Off Switch Resistance
Turn-On Switch Resistance
ORing MOSFET Gate Drive
(V
OG_
- V
IN_
)
ORing MOSFET Fast Turn-On
Threshold
ORing MOSFET Fast Turn-Off
ORing MOSFET Turn-On Delay
ORing MOSFET Turn-Off Delay
PC
to OG2 Delay
HOT SWAP
V
CB
= 0V
Circuit-Breaker Accuracy
Active Current-Limit Sense
Voltage
Fast Comparator Threshold
Fast Comparator Response
Time
GATE Off Delay
GATE Propagation Delay
GATE Drive Voltage
(V
GATE
- V
OUT
)
GATE Pullup Current
GATE Pulldown Current
(Timeout)
GATE Fast Pulldown Current
HOT-SWAP FOLDBACK
Minimum CB Voltage
Minimum FB Voltage
Maximum FB Voltage
V
CB_FBMAX
V
FBMIN
V
FBMAX
(V
CSP
- V
CSN
) = 12V
V
CSP
- V
OUT
, at V
CB
= V
CB_FBMAX
V
CSP
- V
OUT
, at V
CB
= V
CB_TH
3
1
9
6.7
2.1
10
10.7
3.2
11
V
CB_TH
V
V
%
V
CB_TH
V
CSP
- V
CSN
V
CB
= Hi-Z
V
CB
= V
S
V
ACL
V
FC_TH
t
FC_DLY
t
OFF_GATE
t
ON_GATE_PD
V
GATE
I
GATE_ON
I
GATE_OFF
I
GATE_FAST_
OFF
SYMBOL
R
DS_OFF
R
DS_ON
V
OG_
V
FWD_ON
V
FWD_OFF
t
ON_OG_
t
OFF_OG_
t
LH_DLY
CONDITIONS
V
IN_
- V
CSP
= -50mV, I = 50mA
V
IN_
- V
CSP_
= 120mV, I = 70mA
2.9V < V
IN_
< 18V
V
IN_
- V
CSP
rising
V
IN_
- V
CSP
falling, V
OG_
goes to forward
regulation
C
GATE
= 10nF, V
IN_
- V
CSP
= +0.05V
C
GATE
= 10nF, V
IN_
- V
CSP
= -0.05V,
V
OG_
= 0.1 x (V
CP_
- V
IN_
)
V
PC
falling edge to V
OG2
going high
MIN
TYP
0.8
2
MAX
UNITS
Ω
Ω
5.2
11
80
40
20
300
40
12
V
mV
mV
µs
500
65
37.1
52.5
68.9
ns
µs
32.9
47.5
61.1
35
50
65
1.3 x
V
CB_TH
mV
mV
mV
ns
40
20
20
µs
µs
V
-7
650
260
µA
µA
mA
V
CSP
- V
CSN
V
CSP
- V
CSN
= 300mV, C
GATE
= 10nF
(Note 3)
V
EN
high to V
GATE
low
V
ON
low to V
GATE
low
V
ON
= step 0.8V to 2V
2.9V < V
IN_
< 18V
V
GATE
- V
OUT
= 0V
V
OUT
= 12V, V
GATE
= V
OUT
+ 5V
V
OUT
= 12V, V
GATE
= V
OUT
+ 5V
6
-13
350
75
3x
V
CB_TH
160
20
10
10
11
-10
500
200
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Maxim Integrated
│
3
MAX15068
Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
Electrical Characteristics (continued)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
CURRENT-SENSING INPUT
CSP Input Current
CSN Input Current
CDLY
CDLY Upper Threshold
CDLY Lower Threshold
Hysteresis
CDLY Pullup Current
CDLY Pulldown Current
CDLY Ratio
POWER-GOOD (PG)
PG
Threshold OUT
PG
Threshold GATE
PG
Detection Timeout
PG
Assertion Delay
OUTPUTS (FAULT,
PG)
FAULT, PG
Output Voltage Low
FAULT, PG
Output Voltage High
FAULT, PG
Leakage Current
FAULT, PG
Pullup Current
INPUTS
ON,
PC, EN
Turn-On Threshold
ON,
PC, EN
Turn-On Threshold
Hysteresis
ON Fault Reset Threshold
Voltage
ON,
PC
Input Leakage Current
ON,
PC
Clamp Voltage
ON,
PC
Clamp Sink
EN
Pullup Current
CB THREE-STATE INPUT
CB Input Low Current
CB Input High Current
CB Input Open-Current Voltage
CB Low Voltage
I
IN_LOW
I
IN_HIGH
V
CB_OPEN
V
IL
V
CB
= 0.4V
V
CB
= V
S
- 0.2V
Force ±4µA into unconnected CB pin; then
measure voltage on the CB pin
V
CB
rising
1.0
0.4
-75
+75
V
S
- 1
µA
µA
V
V
I
PU
V
ON_TH
V
ON_HYS
V
ON_RESET
I
LEAK
V
ON
, V
PC
, V
EN
rising
V
ON
, V
PC
, V
EN
falling hysteresis
V
ON
falling
V
ON
, V
PC
= 0 to 2.5V
I
SINK
= 1µA
V
ON
, V
PC
= 5V
V
EN
= 0V
-13
1.1
70
0.5
-1
3
300
-10
-7
1.22
123
0.6
1.32
180
0.7
+1
V
mV
V
µA
V
µA
µA
V
OL
V
OH
I
OH
I
PU
I
PG
= I
FAULT
= 1mA
I
PG
= I
FAULT
= 1µA
V
PG
= V
FAULT
= 18V
V
PG
= V
FAULT
= 1.5V
V
S
- 1
-1
-13
-10
V
S
- 0.6
+20
-7
0.4
V
V
µA
µA
V
PG_OUT
V
PG_GATE
t
PG_STARTUP
t
PG_DELAY
V
GATE
> (5V + V
OUT
)
V
GATE
- V
OUT
55
13
0.9 x V
CSP
4.2
70
16
85
19
V
V
ms
ms
V
CDLY_U
V
CDLY_L
I
CDLY_UP
I
CDLY_DOWN
I
CDLY_RATIO
V
CDLY
rising
V
CDLY
falling
-135
1.1
1.2
1.1
1.2
0.2
-100
2
2
-65
2.8
3.2
1.3
V
V
µA
µA
%
I
CSP
I
CSN
V
CSP
= 12V
V
CSN
= 12V
100
0.5
200
1.0
400
mA
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
www.maximintegrated.com
Maxim Integrated
│
4
MAX15068
Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
Electrical Characteristics (continued)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
CB High Voltage
CURRENT MONITORING
Current Monitor vs.
Undervoltage Lockout
V
IPMON_UVLO
V
S
rising
4.1
T
A
= +25°C
-80
-200
-240
-300
-0.35
-0.6
-0.8
-0.8
4.16
0.1
+80
+200
+240
+300
0.35
0.6
0.8
0.8
%
µV
T
A
= 0°C to +85°C
4.23
Hysteresis
V
CSP
= 12V
V
CSP
= 4.8V
to 18V
V
CSP
= 12V,
G
lM
= 71.565
V
CSP
= 4.8V
to 18V
V
SYMBOL
V
IH
CONDITIONS
V
CB
falling, relative to V
S
MIN
TYP
MAX
V
S
- 0.2
UNITS
IPMON Offset (Note 3)
V
IPMON_O
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
T
A
= +25°C
T
A
= 0°C to +85°C
IPMON Gain Error (Note 3)
G
IM_Error
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
V
CSP
= 12V, R
SENSE
= 3mΩ, I
LOAD
= 1A,
(V
CSP
- V
CSN)
= 3mV, T
A
= +25°C,
V
IPMON_ACCURACY
= ((V
IPMON
-
214.7mV)/214.7mV) x 100
V
CSP
= 12V, R
SENSE
= 3mΩ, I
LOAD
= 3A,
(V
CSP
- V
CSN)
= 9mV, T
A
= +25°C,
V
IPMON_ACCURACY
= ((V
IPMON
-
644.085mV)/644.085mV) x 100
V
CSP
=12V,R
SENSE
= 3mΩ, I
LOAD
=
5A, (V
CSP
- V
CSN
) = 15mV, T
A
= +25°C,
V
IPMON_ACCURACY
= ((V
IPMON
-1.073V)
/1.073V) x 100
V
CSP
= 12V, R
SENSE
= 3mΩ, I
LOAD
= 8A,
(V
CSP
- V
CSN
) = 24mV, T
A
= +25°C,
V
IPMON_ACCURACY
= ((V
IPMON
-
1.7175V)/1.7175V) x 100
CMRR (Note 5)
Output Voltage Range
IPMON Voltage Clamp
I
PMON_CMRR
VIPMON
MAX
V
IPMON_CLMP
V
CSP
= 4.8V to 18V
V
CSP
= 4.8V to 18V, -40°C ≤ T
A
≤ +125°C
V
CSP
- V
CSN
≥ 36mV, V
CSP
= 4.8V to 18V,
-40°C ≤ T
A
≤ +125°C
-3
+3
-1
+1
%
Current Monitoring Total
Accuracy (Note 4)
V
IPMON_
ACCURACY
-0.65
+0.65
-0.5
+0.5
102
1.72
2.1
2.3
2.5
dB
V
V
Note 2:
All devices are 100% production tested at T
A
= +25°C. Limits over temperature are guaranteed by design.
Note 3:
Gain and offset are defined as V
IPMON1
= V
IPMON
with Vi
1
= (V
CSP
- V
CSN
) = 3mV, V
IPMON2
= V
IPMON
with Vi
2
=
(V
CSP
- V
CSN
) = 24mV, G
IM
= (V
IPMON2
- V
IPMON1
)/(Vi
2
- Vi
1
), V
IPMON_OS
= V
IPMON1
- G
IM
x Vi
1
.
Note 4:
Accuracy over the entire operating range can be determined combining the specified value of the related offset and gain in
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