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NS8KT

产品描述8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC
产品类别半导体    分立半导体   
文件大小73KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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NS8KT概述

8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC

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NS8AT THRU NS8MT
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage -
50 to 1000 Volts
TO-220AC
0.185 (4.70)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.175 (4.44)
Forward Current -
8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High forward current capability
High surge current capability
Low forward voltage drop
Glass passivated chip junction
High temperature soldering guaranteed:
260°C/10 seconds, 0.160" (4.06 mm) lead length
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-220AB molded plastic body over
passivated chip
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Torque:
5 in. - lbs. max.
Mounting Position:
Any
Weight:
0.064 ounce, 1.81 grams
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
PIN 1
0.205 (5.20)
0.195 (4.95)
PIN 2
CASE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
NS8
AT
NS8
BT
NS8
DT
NS8
GT
NS8
JT
NS8
KT
NS8
MT
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 1)
Typical thermal resistance
(NOTE 2)
Operating junction and storage temperature range
T
C
=25°C
T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
ΘJC
T
J
, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
8.0
125.0
1.1
10.0
100.0
55.0
3.0
-55 to +150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
µA
pF
°C/W
°C
NOTES:
(1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts
(2) Thermal resistance from junction to case mounted on heatsink
4/98

NS8KT相似产品对比

NS8KT NS8MT NS8GT NS8JT NS8BT NS8DT NS8AT
描述 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

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