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NSB8GT

产品描述8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB
产品类别半导体    分立半导体   
文件大小82KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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NSB8GT概述

8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB

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NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
NSB8AT THRU NSB8MT
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage -
50 to 1000 Volts
TO-263AA
Forward Current -
8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High forward current capability
High surge current capability
Low forward voltage drop
Glass passivated chip junction
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
0.047 (1.19)
0.055 (1.40)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
MECHANICAL DATA
Case:
JEDEC TO-263AA molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
0.095 (2.41)
0.100 (2.54)
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
NSB8
AT
NSB8
BT
NSB8
DT
NSB8
GT
NSB8
JT
NSB8
KT
NSB8
MT
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 1)
Typical thermal resistance
(NOTE 2)
Operating junction and storage temperature range
T
C
=25°C
T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
ΘJC
T
J
, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
8.0
175.0
1.1
10.0
100.0
55.0
3.0
-55 to +150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
µA
pF
°C/W
°C
NOTES:
(1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts
(2) Thermal resistance from junction to case mounted on heatsink
4/98

NSB8GT相似产品对比

NSB8GT NSB8MT NSB8KT NSB8JT NSB8BT NSB8DT NSB8AT
描述 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB

 
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