RN4985FS
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor
RN4985FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
0.1±0.05
0.8±0.05
Unit: mm
0.1±0.05
0.15±0.05
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)
0.35 0.35
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
1.0±0.05
0.7±0.05
package.
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
Q1
C
Q2
C
0.48
-0.04
+0.02
B
R1
R2
B
R1
R2
fS6
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLEECTOR1
―
―
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
E
E
JEITA
TOSHIBA
R1: 2.2 kΩ
R2: 47 kΩ
(Q1, Q2 common)
2-1F1D
Weight:0.001g (typ.)
Equivalent Circuit
(top view)
6
5
4
Marking
Type name
Q1
Q2
W4
1
2
3
1
2007-11-01
RN4985FS
Absolute Maximum Ratings
(Ta =25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
20
20
5
50
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−20
−20
−5
−50
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
50
150
−55~150
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
2
2007-11-01
RN4985FS
Electrical Characteristics
(Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
C
ob
Test Condition
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
0.085
120
⎯
0.6
0.4
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
Max
100
500
0.127
⎯
0.15
1.1
0.8
⎯
V
V
V
pF
Unit
nA
mA
Electrical Characteristics
(Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
C
ob
Test Condition
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
−0.085
120
⎯
−0.6
−0.4
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
Max
−100
−500
−0.127
⎯
−0.15
−1.1
−0.8
⎯
V
V
V
pF
Unit
nA
mA
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test Condition
⎯
⎯
Min
1.76
Typ.
2.2
Max
2.64
Unit
kΩ
0.0376 0.0468 0.0562
3
2007-11-01
RN4985FS
Q1
IC - VI(ON)
100
COLLECTOR CURRENT IC (mA)
Ta=100°C
10000
COLLECTOR CURRENT IC (μA)
IC - VI(OFF)
COMMON EMITTER
VCE=5V
10
1000
Ta=100°C
25
-25
25
1
100
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
hFE - IC
1000
Ta=100°C
DC CURRENT GAIN hFE
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
25
-25
100
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
4
2007-11-01
RN4985FS
Q2
IC - VI(ON)
-100
COLLECTOR CURRENT IC (mA)
IC - VI(OFF)
-10000
EMITTER COMMON
VCE= -5V
Ta=100°C
-10
COLLECTOR CURRENT IC (μA)
-1000
Ta=100°C
25
-25
25
-1
-100
-25
EMMITER COMMON
VCE= -0.2V
-0.1
-0.1
-10
-1
-10
-100
0
-0
INPUT VOLTAGE VI(ON) ( V)
-0.2 -0.4 -0.6 -0.8
-1
-1.2
INPUT VOLTAGE VI(OFF) ( V)
-1.4
hFE - IC
1000
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
DC CURRENT GAIN hFE
Ta=100°C
25
100
-25
-100
Ta=100°C
25
-25
-10
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-1
-10
COLLECTOR CURRENT IC (mA)
-100
5
2007-11-01
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