RZF013P01
Pch 12V 1.3A Small Signal MOSFET
Datasheet
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Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
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Features
1) Low On-resistance
2) High power package
3) Low voltage drive(1.5V)
-12V
260mΩ
±1.3A
0.8W
SOT-323T
TUMT3
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Inner circuit
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
P
D*3
T
j
T
stg
Value
-12
±1.3
±5.2
±10
0.8
0.75
150
-55 to +150
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Application
Type
Embossed
Tape
180
8
3000
TL
XC
Unit
V
A
A
V
W
W
℃
℃
Switching
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160527 - Rev.001
RZF013P01
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
156
167
Unit
℃
/W
℃
/W
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
-12
-
-
-
-0.3
-
-
-
-
-
-
1.4
Typ.
-
-21.9
-
-
-
2.4
190
280
400
530
29
-
Max.
-
-
-1
±10
-1.0
-
260
390
600
1060
-
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
V
(BR)DSS
I
D
= -1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= -12V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= -6V, I
D
= -1mA
Δ
V
GS(th)
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
GS
= -4.5V, I
D
= -1.3A
Static drain - source
on - state resistance
R
DS(on)*4
V
GS
= -2.5V, I
D
= -0.6A
V
GS
= -1.8V, I
D
= -0.6A
V
GS
= -1.5V, I
D
= -0.2A
Gate resistance
Forward Transfer
Admittance
R
G
|Y
fs
|
*4
f = 1MHz, open drain
V
DS
= -6V, I
D
= -1.3A
mΩ
Ω
S
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm,Cu pad:625mm
2
)
*4 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160527 - Rev.001
RZF013P01
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= -6V
f = 1MHz
V
DD
⋍
-6V,V
GS
= -4.5V
Unit
Typ.
290
28
21
8
10
30
9
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= -0.6A
R
L
⋍
10Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
Min.
V
DD
⋍
-6V,
I
D
= -1.3A,
V
GS
= -4.5V
-
-
-
Typ.
2.4
0.6
0.4
Max.
-
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*4
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= -1.3A
-
-
-
Typ.
-
-
-
Max.
-0.6
-5.2
-1.2
A
A
V
Unit
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© 2016 ROHM Co., Ltd. All rights reserved.
3/11
20160527 - Rev.001
RZF013P01
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2016 ROHM Co., Ltd. All rights reserved.
4/11
20160527 - Rev.001
RZF013P01
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
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© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160527 - Rev.001
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