TAT7466
75
Ω
RF Amplifier
Applications
•
•
•
Replacement for 5 V SOIC-8 amplifiers
Multi-Dwelling Units
Edge QAM gain stage
SOIC-8 package
Product Features
•
•
•
•
75 , 50-1000 MHz Bandwidth
4.0 dB Noise Figure up to 1000 MHz
Adjustable low power consumption
5 V supply voltage
SOIC-8 package
Functional Block Diagram
RF IN
1
2
3
8
7
6
5
RF OUT
RF IN
4
RF OUT
General Description
The TAT7466 is a 75 RF Amplifier designed for use up
to 1000 MHz. The TAT7466 contains two separate
amplifiers for push pull applications. It is fabricated using
6-inch GaAs pHEMT technology to optimize performance
and cost. Each amplifier contains on-chip active biasing.
The bias current set point of each amplifier is adjustable
with a single resistor from the input to ground. The
TAT7466 may be flexibly configured for 6 V higher gain
applications using external 2:1 transformers, or for direct
replacement of familiar 5 V SOIC-8 amplifiers using a 1:1
balun.
Pin Configuration
Pin #
1
2, 3, 6, 7
4
5
8
Exposed Slug
Symbol
RF IN
No Connect
RF IN
RF OUT
RF OUT
GND PADDLE
Ordering Information
Part No.
TAT7466
TAT7466-EB
Description
75
Ω
RF Amplifier
(lead-free/RoHS compliant SOIC-8 Pkg)
Amplifier Evaluation Board
(Evaluation board is the 2:1 Push Pull design)
Standard T/R size = 1000 pieces on a 7” reel.
Preliminary Data Sheet: Rev B 12/08/10
© 2010 TriQuint Semiconductor, Inc.
-
1 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7466
75
Ω
RF Amplifier
Specifications
Absolute Maximum Ratings
1
Parameter
Operating Temperature
Storage Temperature
Device Voltage
Recommended Operating Conditions
Parameter
o
Rating
-40 to 85 C
-65 to +150
o
C
+10 V
Min
Typ
Max Units
150
V
mA
o
C
V
DD
I
DD
T
J
(for > 10
6
hours MTTF)
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, +6 V V
DD
, Push Pull Application Circuit with 2:1 Transformers
Parameter
Band
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
CSO
1
CTB
1
I
DD2
Typical
50
15.0
0.5
2.6
16
20
-80
-67
190
Typical Per Frequency
250
14.4
2.9
450
14.0
3.3
860
13.2
4.0
1000
13.0
4.3
Units
MHz
dB
+/-dB
dB
dB
dB
dBc
dBc
mA
o
Thermal Resistance
(jnc. to case)
θ
jc
31.5
C/W
Notes:
1. 39 dBmV/ch at output, 80 ch flat
2. R
BIAS
= 5.0 k
Preliminary Data Sheet: Rev B 12/08/10
© 2010 TriQuint Semiconductor, Inc.
-
2 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7466
75
Ω
RF Amplifier
Application Circuit For Single Amplifier 50-1000 MHz
TAT7466 TEST SCHEMATIC (Single Amplifier)
+6V
130mA
C3
L2
C4
C5
L1
RF
INPUT
C1
INPUT
A
1
U1
8
OUTPUT
A
1
2
7
C2
RF
OUT
3
TAT 7466
6
4
5
SOIC-8
BACKSIDE
PADDLE
Notes:
1.
2.
Please contact TriQuint for PCB layout
Pins 2, 3, 6, and 7 are no connect internally
Bill of Material
Ref. Desg. Value Description
U1
L1, L2
C1, C2, C3,
C4, C4, C5
75
Ω
dual pHEMT Amplifier
880 nH Chip Coil, Vertical Wire Wound Ferrite, 1206, 30 %
0.01 uF Ceramic Chip Cap., 0402, 16 V, 10 %, X7R
Manufacturer Part Number
TriQuint
Murata
AVX
1
TAT7466
LQH31HNR88K
0402YC103KAT
Notes:
50-2600 MHz Application Board Typical Performance
1. Or equivalent.
Preliminary Data Sheet: Rev B 12/08/10
© 2010 TriQuint Semiconductor, Inc.
-
3 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7466
75
Ω
RF Amplifier
50-1000 MHz Single Amplifier Application Board Typical Performance
V
DD
= +6 V, I
DD
= 130 mA, Single amplifier
Gain
75 ohm, single amp
Input Return Loss
75 ohm, single amp
24
22
20
S21 (dB)
18
16
14
S21
-14
-18
-22
-26
S11 (dB)
-30
-34
-38
-42
-46
-50
0
250
500
750
1000
1250
0
250
500
750
1000
1250
Frequency (MHz)
Frequency (MHz)
S11
12
10
Output Return Loss
75 ohm, single amp
Noise Figure
75 ohm, single amp
-14
-16
-18
S22 (dB)
NF(dB)
5
4.5
4
3.5
3
2.5
2
1.5
S22
Noise Figure
-20
-22
-24
-26
-28
-30
0
250
500
750
1000
1250
Frequency (MHz)
1
0.5
0
0
250
500
750
1000
1250
Frequency (MHz)
Preliminary Data Sheet: Rev B 12/08/10
© 2010 TriQuint Semiconductor, Inc.
-
4 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7466
75
Ω
RF Amplifier
Application Circuit For 2:1 Push-Pull Amplifier 50-1000 MHz
TAT7466 APPLICATION SCHEMATIC
+6V
245mA
VDD
C7
C5
L5
C6
C1
RF
INPUT
4
1
INPUT
A
1
OUTPUT
A
8
L1
C9
RBIAS
2
7
L3
C3
3
T2
2
1:2
2
3
3
TAT 7466
6
2:1
1
4
1
RBIAS
T1
C2
C10
INPUT
B
4
5
L4
C4
SOIC-8
RF
OUT
OUTPUT
B
L2
VDD C8
BACKSIDE
PADDLE
Notes:
1. Please contact TriQuint for PCB layout
2. Pins 2, 3, 6, and 7 are no connect internally
Bill of Material
Ref. Desg. Value
U1
L1, L2, L5
880 nH
Description
75
Ω
dual pHEMT Amplifier
Chip Coil, Vertical Wire Wound Ferrite, 1206,
30 %
Chip Coil, 0402, 5 %
Manufacturer Part Number
TriQuint
Murata
Coilcraft
AVX
1
AVX
1
AVX
1
M/A COM
TAT7466
LQH31HNR88K
0402CS-3N9XJLW
0402YC103KAT
04025A151JAT2A
04025A005BAT9A
MABA-007681-
CT2010
L3, L4
3.9 nH
C1, C2, C4,
0.01 uF
Ceramic Chip Cap., 0402, 16 V, 10 %, X7R
C5, C6, C7, C 8 Application Board Typical Performance
50-2600 MHz
C3, C4
150 pF
Ceramic Chip Cap., 0402, 16 V, 10 %, X7R
C9, C10
0.5 pF
Ceramic Chip Cap., 0402, 16 V, 10 %, X7R
Transmission Line Balun Transformer, 75 ,
T1, T2
2:1 Xformer
5 –1200 MHz
2
RBIAS
No Load
Reference Designator for Resistor, 0402
Notes:
1. Or equivalent.
2. R
BIAS
is used to reduce I
DD
to optimum value for given application.
Preliminary Data Sheet: Rev B 12/08/10
© 2010 TriQuint Semiconductor, Inc.
-
5 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
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