PD - 97317
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 150 °C
Square RBSOA
100% of the parts tested for clamped inductive load
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
IRGP4072DPbF
V
CES
= 300V
I
C
= 40A, T
C
= 100°C
G
V
CE(on)
typ. = 1.46V
E
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Low EMI
n-channel
C
Applications
•
•
•
•
Uninterruptible Power Supplies
Battery operated vehicles
Welding
Solar converters and inverters
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
300
70
40
120
120
70
40
120
±20
±30
180
71
-55 to +150
Units
V
c
e
A
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.70
0.87
–––
–––
Units
°C/W
1
www.irf.com
04/16/08
IRGP4072DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
300
—
—
—
2.6
—
—
—
—
—
—
—
Typ.
—
0.20
1.46
1.59
—
-13
28
1.0
450
2.26
1.53
—
Max. Units
—
—
1.70
—
5.0
—
—
25
—
2.69
—
±100
nA
V
V
V
Conditions
V
GE
= 0V, I
C
= 1.0mA
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V I
C
= 40A, V
GE
= 15V, T
J
= 25°C
I
C
= 40A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 500µA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 150°C)
S V
CE
= 25V, I
C
= 40A
µA
V
GE
= 0V, V
CE
= 300V
V
GE
= 0V, V
CE
= 300V, T
J
= 150°C
I
F
= 40A
I
F
= 40A, T
J
= 150°C
V
GE
= ±30V
5,6,7
9,10,11
9, 10,
11, 12
gfe
I
CES
V
FM
I
GES
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
73
13
26
409
838
1247
18
36
144
95
713
1076
1789
16
39
176
133
2265
190
58
Max. Units
110
20
39
525
1017
1542
23
50
121
124
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 40A
V
GE
= 15V
V
CC
= 240V
Conditions
Ref.Fig
23
CT1
I
C
= 40A, V
CC
= 240V, V
GE
= 15V
R
G
= 10Ω, L = 200µH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
CT3
I
C
= 40A, V
CC
= 240V, V
GE
= 15V
R
G
= 10Ω, L = 200µH, T
J
= 25°C
CT3
I
C
= 40A, V
CC
= 240V, V
GE
=15V
R
G
=10Ω, L=200µH, T
J
= 150°C
Energy losses include tail & diode reverse recovery
13, 15
CT3
WF1, WF2
14, 16
CT3
WF1
WF2
22
I
C
= 40A, V
CC
= 240V, V
GE
= 15V
R
G
= 10Ω, L = 200µH
T
J
= 150°C
f = 1.0Mhz
T
J
= 150°C, I
C
= 120A
V
CC
= 240V, Vp =300V
Rg = 10Ω, V
GE
= +15V to 0V
4
CT2
FULL SQUARE
—
—
—
909
122
36
—
—
—
µJ
ns
A
T
J
= 150°C
V
CC
= 240V, I
F
= 40A
V
GE
= 15V, Rg = 10Ω, L =200µH, L
s
= 150nH
17, 18, 19
20, 21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 200µH, R
G
= 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
2
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IRGP4072DPbF
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T C (°C)
Ptot (W)
200
175
150
125
100
75
50
25
0
0
25
50
75
T C (°C)
100
125
150
IC (A)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
10µsec
100µsec
100
IC (A)
IC (A)
10
TC = 25°C
TJ = 150°C
Single Pulse
1msec
10
1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
150°C; V
GE
=15V
200
180
160
140
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
200
180
160
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 60µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 60µs
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3
IRGP4072DPbF
200
180
160
140
ICE (A)
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
120
100
80
60
40
20
0
0
2
4
6
8
10
60
IF (A)
-40°c
25°C
150°C
40
20
0
0.0
1.0
2.0
VF (V)
3.0
4.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 60µs
20
18
16
14
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 60µs
20
18
16
14
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 20A
ICE = 40A
ICE = 80A
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 20A
ICE = 40A
ICE = 80A
15
20
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
ICE (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
200
180
160
140
T J = 25°C
T J = 150°C
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 20A
ICE = 40A
ICE = 80A
120
100
80
60
40
20
0
15
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
4
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IRGP4072DPbF
3000
2500
2000
Energy (µJ)
1000
EOFF
1500
1000
EON
500
0
0
10
20
30
40
IC (A)
50
60
70
80
Swiching Time (ns)
tF
tdOFF
100
tR
tdON
10
0
10
20
30
40
IC (A)
50
60
70
80
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 200µH; V
CE
= 240V, R
G
= 10Ω; V
GE
= 15V
2500
EOFF
2000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 200µH; V
CE
= 240V, R
G
= 10Ω; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
Energy (µJ)
tF
100
tR
1500
EON
1000
tdON
500
0
25
50
75
100
125
10
0
25
50
75
100
125
RG (
Ω
)
Rg (
Ω
)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 200µH; V
CE
= 240V, I
CE
= 40A; V
GE
= 15V
40
RG = 10
Ω
35
RG = 22
Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 200µH; V
CE
= 240V, I
CE
= 40A; V
GE
= 15V
40
35
IRR (A)
60
80
IRR (A)
30
30
25
RG = 47
Ω
RG = 100
Ω
25
20
15
0
20
40
IF (A)
20
0
25
50
RG (
Ω)
75
100
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 150°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 150°C
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