NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
http://onsemi.com
Features
•
High Density Power MOSFET with Ultra Low R
DS(on)
•
•
•
•
•
•
•
V
DSS
−20
V
R
DS(ON)
TYP
26 mW @
−4.5
V
I
D
MAX
−5.4
A
Providing Higher Efficiency
Miniature SOIC−8 Surface Mount Package
−
Saves Board Space
Diode Exhibits High Speed with Soft Recovery
I
DSS
Specified at Elevated Temperature
Drain−to−Source Avalanche Energy Specified
Mounting Information for the SOIC−8 Package is Provided
These Devices are Pb−Free and are RoHS Compliant
NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Single P−Channel
D
G
S
Applications
•
Power Management in Portable and Battery−Powered Products, i.e.:
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
SOIC−8
CASE 751
STYLE 13
8
D
D
D D
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
E5P02x
AYWW
G
G
1
NC S
S G
E5P02
x
A
Y
WW
G
= Specific Device Code
= Blank or S
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMS5P02R2G
NVMS5P02R2G
Package
Shipping
†
SOIC−8 2500 / Tape & Reel
(Pb−Free)
SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
©
Semiconductor Components Industries, LLC, 2012
December, 2012
−
Rev. 3
1
Publication Order Number:
NTMS5P02R2/D
NTMS5P02, NVMS5P02
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 mW)
Gate−to−Source Voltage
−
Continuous
Thermal Resistance
−
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance
−
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance
−
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy
−
Starting T
J
= 25°C
(V
DD
=
−20
Vdc, V
GS
=
−5.0
Vdc, Peak I
L
=
−8.5
Apk, L = 10 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
T
J
, T
stg
E
AS
T
L
Value
−20
−20
±10
50
2.5
−7.05
−5.62
1.2
−4.85
−28
85
1.47
−5.40
−4.30
0.7
−3.72
−20
159
0.79
−3.95
−3.15
0.38
−2.75
−12
−55
to +150
360
260
Unit
V
V
V
°C/W
W
A
A
W
A
A
°C/W
W
A
A
W
A
A
°C/W
W
A
A
W
A
A
°C
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t
≤
10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
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2
NTMS5P02, NVMS5P02
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted) (Note 5)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=
−250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
(V
DS
=
−20
Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
Gate−Body Leakage Current
(V
GS
=
−10
Vdc, V
DS
= 0 Vdc)
Gate−Body Leakage Current
(V
GS
= +10 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
=
−250
mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
GS
=
−4.5
Vdc, I
D
=
−5.4
Adc)
(V
GS
=
−2.5
Vdc, I
D
=
−2.7
Adc)
Forward Transconductance (V
DS
=
−9.0
Vdc, I
D
=
−5.4
Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 6 & 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
BODY−DRAIN DIODE RATINGS
(Note 6)
Diode Forward On−Voltage
Reverse Recovery Time
(I
S
=
−5.4
Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300
ms
max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
(I
S
=
−5.4
Adc, V
GS
= 0 V)
(I
S
=
−5.4
Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
−
−0.95
−0.72
40
20
20
0.03
−1.25
−
75
−
−
−
mC
Vdc
ns
(V
DS
=
−16
Vdc,
V
GS
=
−4.5
Vdc,
I
D
=
−5.4
Adc)
(V
DD
=
−16
Vdc, I
D
=
−5.4
Adc,
V
GS
=
−4.5
Vdc,
R
G
= 6.0
W)
(V
DD
=
−16
Vdc, I
D
=
−1.0
Adc,
V
GS
=
−4.5
Vdc,
R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
tot
Q
gs
Q
gd
−
−
−
−
−
−
−
−
−
−
−
18
25
70
55
22
70
65
90
20
4.0
7.0
35
50
125
100
−
−
−
−
35
−
−
nC
ns
ns
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1375
510
200
1900
900
380
pF
V
GS(th)
Vdc
−0.65
−
−
−
−
−0.9
2.9
0.026
0.037
15
−1.25
−
0.033
0.048
−
mV/°C
W
V
(BR)DSS
Vdc
−20
−
−
−
−
−
−
−
−15
−
−
−0.2
−
−
−
−
−1.0
−10
−
−100
nAdc
100
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
I
GSS
nAdc
R
DS(on)
g
FS
Mhos
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3
NTMS5P02, NVMS5P02
12
−I
D
, DRAIN CURRENT (AMPS)
10
8
6
4
2
0
0
−1.7
V
V
GS
=
−1.3
V
0.25
0.5
0.75
1
1.25
1.5 1.75
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
−8
V
−2.3
V
−4.5
V
−3.7
V
−3.1
V
−2.7
V
−2.5
V
12
−I
D
, DRAIN CURRENT (AMPS)
T
J
= 25°C
−2.1
V
V
DS
≥
−10
V
10
8
6
4
2
0
1
2.5
1.5
2
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
−1.9
V
100°C
25°C
T
J
=
−55°C
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.08
I
D
=
−5.4
A
T
J
= 25°C
0.06
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.05
Figure 2. Transfer Characteristics
T
J
= 25°C
0.04
V
GS
=
−2.5
V
V
GS
=
−2.7
V
0.03
V
GS
=
−4.5
V
0.02
0.04
0.02
0
0
8
2
4
6
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
0.01
2
4
8
10
6
−I
D
, DRAIN CURRENT (AMPS)
12
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
1.6
1.4
1.2
1
0.8
0.6
−50
I
D
=
−5.4
A
V
GS
=
−4.5
V
10,000
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
−I
DSS
, LEAKAGE (nA)
T
J
= 150°C
1000
T
J
= 125°C
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
100
2
4
8
14
16
18
6
10
12
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage Current
versus Voltage
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4
NTMS5P02, NVMS5P02
−V
GS , GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
5
4
3
2
1
0
I
D
=
−5.4
A
T
J
= 25°C
QT
−V
DS
Q1
Q2
−V
GS
20
16
12
8
4
0
−V
DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4000
C, CAPACITANCE (pF)
3000
C
rss
2000
C
iss
1000
C
rss
10
5
0
−V
GS
−V
DS
GATE−TO−SOURCE OR
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
10
15
20
C
oss
0
0
4
8
12
16
20
24
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
−I
S
, SOURCE CURRENT (AMPS)
V
DD
=
−16
V
I
D
=
−5.4
A
V
GS
=
−4.5
V
t, TIME (ns)
5
4
3
2
1
0
V
GS
= 0 V
T
J
= 25°C
t
d(off)
t
f
t
r
100
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
100
ID , DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
10
di/dt
10 ms
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
I
S
t
rr
t
a
t
b
TIME
dc
100
t
p
I
S
0.25 I
S
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
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