SUD50N03-10
Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
Product Summary
V
DS
(V)
30
r
DS(on)
(W)
0.010 @ V
GS
= 10 V
0.019 @ V
GS
= 4.5 V
I
D
(A)
"15
"12
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
Order Number:
SUD50N03-10
S
N-Channel MOSFET
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
"15
"10
"100
15
83
4
a
–55 to 175
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70265.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. E, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
Symbol
R
thJA
R
thJC
Typical
Maximum
30
1.8
Unit
_C/W
1
SUD50N03-10
Siliconix
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=15 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
=15 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15 A
20
50
0.010
0.018
0.019
S
W
30
V
1.0
2.0
"100
1
50
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
3200
800
150
55
10
9
16
8
33
20
30
20
60
40
ns
100
nC
6000
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
55
100
1.5
100
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. E, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
2
SUD50N03-10
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
200
160
I
D
– Drain Current (A)
6V
120
5V
80
40
2, 3 V
0
0
2
4
6
8
10
0
0
2
4
6
8
I
D
– Drain Current (A)
Output Characteristics
V
GS
= 10, 9, 8, 7 V
100
80
60
40
20
Transfer Characteristics
T
C
= –55_C
25_C
125_C
4V
V
DS
– Drain-to-Source Voltage (V)
80
V
GS
– Gate-to-Source Voltage (V)
0.030
0.025
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
0.005
0
Transconductance
T
C
= –55_C
On-Resistance vs. Drain Current
g
fs
– Transconductance (S)
60
25_C
40
125_C
20
0
0
10
20
30
40
50
r
DS(on)
– On-Resistance (
W
)
0
20
40
60
80
100
I
D
– Drain Current (A)
5000
4000
C – Capacitance (pF)
C
iss
3000
2000
C
oss
1000
0
C
rss
I
D
– Drain Current (A)
10
V
GS
– Gate-to-Source Voltage (V)
8
6
4
2
0
V
DS
= 15 V
I
D
= 50 A
Capacitance
Gate Charge
0
5
10
15
20
25
30
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. E, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
3
SUD50N03-10
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
2.4
2.0
1.6
1.2
0.8
0.4
0
-50 -25
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 50 A
I
S
– Source Current (A)
Source-Drain Diode Forward Voltage
r
DS(on)
– On-Resistance (
W
)
(Normalized)
T
J
= 175_C
T
J
= 25_C
10
0
25
50
75
100 125 150 175
T
J
– Junction Temperature (_C)
Thermal Ratings
20
16
I
D
– Drain Current (A)
12
8
4
0
I
D
– Drain Current (A)
Maximum Drain Current vs.
Ambient Temperature
500
Safe Operating Area
100
Limited
by r
DS(on)
10, 100
ms
10
1 ms
10 ms
1
T
A
= 25_C
Single Pulse
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
100 ms
1s
dc
0
25
50
75
100
125
150
175
T
A
– Ambient Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
30
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. E, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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